Abstract:Tunable semiconductor lasers are often listed in critical technology road maps for future dense-wavelength-division-multiplexing (DWDM) systems and high-performance computing systems, and they are increasingly demanded in long-haul, metropolitan, and access networks. The capability to produce such lasers directly on silicon (Si) could boost the use of Si photonics and facilitate the adoption of optical data transmission even at the chip scale. Moreover, just the use of Si as a cheap and large-diameter substrate for device production is very advantageous, as the fabrication can take advantage of the highly optimized processing techniques and economy of scale enabled by decades of development in Si microelectronics. Here, we report a tunable single-wavelength quantum dot (QD) laser directly grown on Si. The high carrier confinement and a real dot density of QDs provide reduced sensitivity to crystalline defects, which allows for exceptional lasing performance even in lattice-mismatched material systems. The discrete density of states of dots yields unique gain properties that show promise for improved device performance and new functionalities relative to the quantum well counterparts, including high temperature stability, low threshold operation, reduced sidewall recombination, and isolator-free stability. We implement a simple, integrable architecture to achieve over 45 dB side-mode-suppression-ratio without involving regrowth steps or subwavelength grating lithography. Under continuous-wave electrical injection at room temperature, we achieved a 16 nm tuning range with output powers of over 2.7 mW per tuning wavelength. This work represents a step towards using III–V/Si epitaxy to form efficient, easily manufacturable on-chip Si light sources for not only DWDM networks, but also spectroscopy, biosensors, and many other emerging applications.

High Performance Self-Organized In(Ga)As Quantum Dot Lasers Monolithically Grown on Silicon

High Performance Self-Organized Ingaas Quantum Dot Lasers on Silicon

High-Performance Quantum Dot Lasers and Integrated Optoelectronics on Si This Review of Lasers, Grown Directly on Silicon to Perform Electrical to Optical Signal Conversion, Finds That These Temperature-Stable Devices Can Be Integrated with Other Optical Devices.

Inas/Gaas Quantum-Dot Light Emitters Monolithically Grown On Si Substrates

Tunable Quantum Dot Lasers Grown Directly on Silicon

Optimisation of 1.3-μm InAs/GaAs quantum-dot lasers monolithically grown on Si substrates

1.3 Μm InAs/GaAs Quantum‐dot Laser Monolithically Grown on Si Substrates Operating over 100°C

Room-temperature self-organised In/sub 0.5/Ga/sub 0.5/As quantum dot laser on silicon

High-performance InAs/GaAs Quantum-Dot Laser Didoes Monolithically Grown on Silicon for Silicon Photonics

High Slope-Efficiency Quantum-Dot Lasers Grown on Planar Exact Silicon (001) with Asymmetric Waveguide Structures.

Electrically pumped continuous-wave 13 µm InAs/GaAs quantum dot lasers monolithically grown on on-axis Si (001) substrates

Electrically Pumped Continuous‐wave 1.3‐µm InAs/GaAs Quantum Dot Lasers Monolithically Grown on Si Substrates

Quantum Dot Lasers and Integrated Guided-Wave Devices Monolithically Grown on Si

Molecular Beam Epitaxial Growth Of Inas Quantum Dots On Gaas For High Characteristics Temperature Lasers

Electrically pumped continuous-wave 1.3 µm InAs/GaAs quantum dot lasers monolithically grown on on-axis Si (001) substrates.

Highly Reliable Quantum Dot Laser Directly Grown on CMOS Compatible Si (001) Substrate

Monolithic Quantum-Dot Distributed Feedback Laser Array on Silicon

On-chip Integration of InGaAs/GaAs Quantum Dot Lasers with Waveguides and Modulators on Silicon

Monolithic Integration of O-Band InAs Quantum Dot Lasers with Engineered GaAs Virtual Substrate Based on Silicon.

Extremely Low Threshold Current Density InGaAs/AlGaAs Quantum-Well Lasers on Silicon

InAs/GaAs Quantum-Dot Lasers Grown on On-Axis Si (001) Without Dislocation Filter Layers