In-depth Understanding of the Band Alignment and Interface States
Scenario in Bi_2O_2Se/SrTiO_3 Ultrathin Heterojunction
Ke Zhang,Yusen Feng,Lei Hao,Jing Mi,Miao Du,Minghui Xu,Yan Zhao,Jianping Meng,Liang Qiao
2024-01-01
Abstract:Bismuth oxyselenide (Bi_2O_2Se), a novel quasi-2D charge-carrying
semiconductor, is hailed as one of the best emerging platforms for the next
generation semiconductor devices. Recent efforts on developing diverse
Bi_2O_2Se heterojunctions have produced extensive potential applications in
electronics and optoelectronics. In-depth understanding of the band alignment
and especially interface dynamics is, however, still challenging. In this work,
a comprehensive experimental investigation on the band alignment is performed
by a high-resolution X-ray photoelectron spectrometer (HRXPS), and the
properties of interface states are also fully discussed. The results show that
the ultrathin film Bi_2O_2Se grown on SrTiO_3 (TiO_2 (001) termination)
exhibits Type-I (straddling gap) band alignment with a valence band offset
(VBO) of about 1.77±0.04 eV and conduction band offset (CBO) of about
0.68±0.04 eV. However, further considering the contribution of the interface
states, the bands on the interface present a herringbone configuration due to
sizable build-in electric fields, which is significantly different from the
conventional band alignment. In this sense, our results provide an insightful
guidance to the development of high-efficiency electronic and optoelectronic
devices, specifically of the devices where the charge transfer is highly
sensitive to interface states.