Band Offsets of Tiznsno/Si Heterojunction Determined by X-Ray Photoelectron Spectroscopy

R. J. Sun,X. F. Li,Q. J. Jiang,W. C. Yan,L. S. Feng,X. D. Li,B. Lu,Z. Z. Ye,J. G. Lu

DOI: https://doi.org/10.1063/1.4896764

IF: 2.877

2014-01-01

Journal of Applied Physics

Abstract:X-ray photoelectron spectroscopy (XPS) was utilized to measure the valence band offset (ΔEV) of the TiZnSnO (TZTO)/Si heterojunction. TZTO films were deposited on Si (100) substrates using magnetron sputtering at room temperature. By using the Zn 2p3/2 and Sn 3d5/2 energy levels as references, the value of ΔEV was calculated to be 2.69 ± 0.1 eV. Combining with the experimental optical energy band gap of 3.98 eV for TZTO extracted from the UV-vis transmittance spectrum, the conduction band offset (ΔEC) was deduced to be 0.17 ± 0.1 eV at the interface. Hence, the energy band alignment of the heterojunction was determined accurately, showing a type-I form. This will be beneficial for the design and application of TZTO/Si hybrid devices.