Energy Band Alignment Of Ingazno4/Si Heterojunction Determined By X-Ray Photoelectron Spectroscopy

Zhangyi Xie,Hongliang Lü,Saisheng Xu,Yang Geng,Qingqing Sun,Shijin Ding,David Wei Zhang

DOI: https://doi.org/10.1063/1.4773299

IF: 4

2012-01-01

Applied Physics Letters

Abstract:X-ray photoelectron spectroscopy was utilized to determine the valence band offset (Delta E-V) of the InGaZnO4 (IGZO)/Si heterojunction. The IGZO films were grown on Si (100) using radio frequency magnetron sputtering. A value of Delta E-V = 2.53 eV was obtained by using In 3d(5/2), Ga 2p(3/2) core energy levels as references. Taking into consideration the experimental band gap of 3.20 eV of the IGZO, this would result in a conduction band offset Delta E-C = 0.45 eV in this heterostructure. (C) 2012 American Institute of Physics. [http://dx.doi.org/10.1063/1.4773299]