Abstract:The ZnO/GaN heterojunctions are extensively investigated now, owing to their good luminescent properties and devisable capability to form efficient hybrid structures. An electron-blocking layer inserted into heterojunctions can greatly change their properties. In this work, n-ZnO/β-InxGa2-xO3/p-GaN heterojunctions have been successfully formed using atomic layer deposition methods. We show that the doping of In can effectively tune the band edges of the heterojunctions. First-principle calculations reveal that the bandgap of bulk β-InxGa2-xO3 shrinks linearly with the increase in In contents, accompanied by an upward movement of the valence band maximum and a downward movement of the conduction band minimum. As the indium concentrations increase, the valence band offsets show an upward movement at both the InxGa2-xO3/GaN and ZnO/InxGa2-xO3 interfaces, while the conduction band offsets present different trends. A broad, reddish yellow-green emission appears after In doping, which verifies the effect of band alignment. What is more, we show that the amorphization of InxGa2-xO3 can play an important role in tuning the band edge. This work provides access to a series of band offsets tunable heterojunctions and can be used for the further design of direct white light-emitting diodes without any phosphors, based on this structure.

Band Alignments at Interface of Zno/Fapbi(3) Heterojunction by X-Ray Photoelectron Spectroscopy

Band Alignment Determination of Zno/Pbse Heterostructure Interfaces by Synchrotron Radiation Photoelectron Spectroscopy

Band Alignment at the Interface of Pbte/Snte Heterojunction Determined by X-Ray Photoelectron Spectroscopy

Band Offsets of Zno/Pbte Heterostructure Determined by Synchrotron Radiation Photoelectron Spectroscopy

Band offsets in HfTiO/InGaZnO4 heterojunction determined by X-ray photoelectron spectroscopy

Orientation Dependent Band Alignment for P-Nio/N-Zno Heterojunctions

Asymmetric Interface Band Alignments of Cu2o/Zno and Zno/Cu2o Heterojunctions

Energy Band Alignment of PbTe/CdTe(111) Interface Determined by Ultraviolet Photoelectron Spectra Using Synchrotron Radiation

Band Alignment and Band Bending at Α-Ga2o3/zno N-N Isotype Hetero-Interface

Band Alignment of ZnO/CdSe Quantum Dots Heterojunction Determined by Ultraviolet Photoelectron Spectroscopy Using Synchrotron Radiation

Experimental Determination Of Valence Band Offset At Pbte/Cdte(111) Heterojunction Interface By X-Ray Photoelectron Spectroscopy

Valence-band Offset of P-Nio/n-zno Heterojunction Measured by X-ray Photoelectron Spectroscopy

Valence Band Offset of N-Zno/p-mgxni1−xo Heterojunction Measured by X-Ray Photoelectron Spectroscopy

Band Alignment and Interfacial Structure of ZnO/Si Heterojunction with Al2O3 and HfO2 As Interlayers

Valence-band Offset of N -Zn 0.8 Mg 0.2 O/ P -Ni 0.8 Mg 0.2 O Heterojunction with Tunable Bandgaps of Both Sides Measured by X-ray Photoelectron Spectroscopy

Computational and experimental studies on band alignment of ZnO/InxGa2-xO3/GaN heterojunctions

Termination dependence and electric field modification of band alignment in a CNT/CH<sub>3</sub>NH<sub>3</sub>PbI<sub>3</sub> heterojunction

Energy Band Alignment Of Ingazno4/Si Heterojunction Determined By X-Ray Photoelectron Spectroscopy

Universal Band Alignment Rule for Perovskite/Organic Heterojunction Interfaces

Experimental Determination of Valence Band Offset at Pbte/Ge(100) Interface by Synchrotron Radiation Photoelectron Spectroscopy

Valence-Band Offset Of Epitaxial Zno/Mgo (111) Heterojunction Determined By X-Ray Photoelectron Spectroscopy