Abstract:We present research results on the electronic transport in heterostructures based on p-type nickel oxide (NiO) with the n-type oxide semiconductors zinc oxide (ZnO) and cadmium oxide (CdO). NiO is a desirable candidate for application in (opto-)electronic devices. However, because of its small electron affinity, heterojunctions with most n-type oxide semiconductors exhibit conduction and valence band offsets at the heterointerface in excess of 1 eV. ZnO/NiO junctions exhibit a so called type-II band alignment, making electron-hole recombination the only process by which a current can vertically flow through the structure. These heterojunctions are nevertheless shown to be of practical use in efficient optoelectronic devices, as exemplified here by our UV-converting transparent solar cells. These devices, although exhibiting high conversion efficiencies, suffer from two light-activated recombination channels connected to the type-II interface, one of which we identify and analyse in more detail here. Furthermore, CdO/NiO contacts were studied - a heterostructure with even larger band offsets such that a type-III band alignment is achieved. This situation theoretically enables the development of a 2-dimensional electronic system consisting of topologically protected states. We present experiments demonstrating that the CdO/NiO heterostructure indeed hosts a conductive layer absent in both materials when studied separately.

Nickel oxide-based heterostructures with large band offsets

Electronic Structure and Band Alignment at the NiO and SrTiO3 p-n Heterojunctions

A van der Waals pn heterojunction with organic/inorganic semiconductors

Band Alignment and Interface Recombination in NiO/β-Ga2O3 Type-II P-N Heterojunctions

Band Alignment and Interface Recombination in NiO/ β -Ga 2 O 3 Type-II p-n Heterojunctions

Heterojunction Devices Fabricated from Sprayed n-Type Ga2O3, Combined with Sputtered p-Type NiO and Cu2O

Band alignment of wide bandgap NiO/MoO3 and NiO/WO3 p-n heterojunctions studied by high-resolution X-ray photoelectron spectroscopy

Band Offsets of Zno/Pbte Heterostructure Determined by Synchrotron Radiation Photoelectron Spectroscopy

Orientation Dependent Band Alignment for P-Nio/N-Zno Heterojunctions

Band Alignment Determination of Zno/Pbse Heterostructure Interfaces by Synchrotron Radiation Photoelectron Spectroscopy

Band Alignments at Interface of Cu2znsns4/Zno Heterojunction: an X-Ray Photoelectron Spectroscopy and First-Principles Study

Band Alignment and Band Bending at Α-Ga2o3/zno N-N Isotype Hetero-Interface

Electronic structures of Zn1-xGaxO1-xNx and band offsets of the ZnO/Zn1-xGaxO1-xNx heterojunction across the entire concentration range from first principles

Construction of 2D Lateral Pseudoheterostructures by Strain Engineering

Valence-band Offset of N -Zn 0.8 Mg 0.2 O/ P -Ni 0.8 Mg 0.2 O Heterojunction with Tunable Bandgaps of Both Sides Measured by X-ray Photoelectron Spectroscopy

Computational and experimental studies on band alignment of ZnO/InxGa2-xO3/GaN heterojunctions

Energy Dependent Z-Scheme via Metal Interfacing Two-Dimensional p-type and n-type Semiconductor Layers for Efficient Opto-Electronic Conversion.

The Band Offset at CdS/Cu 2 ZnSnS 4 Heterojunction Interface

Uncovering an Interfacial Band Resulting from Orbital Hybridization in Nickelate Heterostructures

Metal oxide heterojunction (NiO/ZnO) prepared by low temperature solution growth for UV-photodetector and semi-transparent solar cell