Abstract:Solid solution nanocrystals of gallium nitride-zinc oxide have been realized as potential photocatalysts for visible light driven overall water splitting. The band gap of these materials has been found to narrow further into the visible region as a function of increasing zinc oxide concentration, and thus, it is desirable to synthesize zinc oxide-rich gallium nitride-zinc oxide solid solutions. In this paper, we discuss the effects of using nitridation temperature to control zinc oxide content on the electronic and chemical properties of gallium nitride-zinc oxide solid solution nanostructures. The effect of nitridation temperature was studied using X-ray absorption fine structure (XAFS), including both X-ray absorption near edge structure (XANES) and extended X-ray absorption fine structure (EXAFS), and X-ray excited optical luminescence (XEOL). It was determined that using nitridation temperature as a method of controlling zinc oxide concentration results in solid solutions with poor crystallinity, phase separation, and mixed surface oxide formation. These findings suggest that many complications arise from using nitridation temperature to control zinc oxide concentration in gallium nitride-zinc oxide solid solutions, and thus, it is possible that the resultant materials would exhibit poor photocatalytic activity.

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