Abstract:Zinc oxide (ZnO) is a compound semiconductor with a direct band gap and high exciton binding energy. The unique property, i.e., high efficient light emission at ultraviolet band, makes ZnO potentially applied to the short-wavelength light emitting devices. However, efficient p-type doping is extremely hard for ZnO. Due to the wide band gap and low valence band energy, the self-compensation from donors and high ionization energy of acceptors are the two main problems hindering the enhancement of free hole concentration. Native defects in ZnO can be divided into donor-like and acceptor-like ones. The self-compensation has been found mainly to originate from zinc interstitial and oxygen vacancy related donors. While the acceptor-like defect, zinc vacancy, is thought to be linked to complex shallow acceptors in group-VA doped ZnO. Therefore, the understanding of the behaviors of the native defects is critical to the realization of high-efficient p-type conduction. Meanwhile, some novel ideas have been extensively proposed, like double-acceptor co-doping, acceptor doping in iso-valent element alloyed ZnO, etc., and have opened new directions for p-type doping. Some of the approaches have been positively judged. In this article, we thus review the recent (2011–now) research progress of the native defects and p-type doping approaches globally. We hope to provide a comprehensive overview and describe a complete picture of the research status of the p-type doping in ZnO for the reference of the researchers in a similar area.

Correlation Between Carrier Recombination and P-Type Doping in P Monodoped and In–P Codoped ZnO Epilayers

Carrier Concentration Dependence Of Acceptor Activation Energy In P-Type Zno

Temperature-dependent Photoluminescence of Undoped, N-doped and N-In Codoped ZnO Thin Films

Carrier localization in codoped ZnO:N:Al films

The origin of p-type conduction in (P, N) co-doped ZnO

Photoluminescence and Resonant Raman Scattering in N-doped ZnO Thin Films

Carrier Type- and Concentration-Dependent Absorption and Photoluminescence of ZnO Films Doped with Different Na Contents

Comparative photoluminescence study on p-type and n-type ZnO films codoped by nitrogen and aluminium

Multi-Carrier Transport Properties in P-Type Zno Thin Films

Correlation Between the 3.31-Ev Emission and the Doping Level in Indium-Doped ZnO Nanostructures

Recent progress of the native defects and p-type doping of zinc oxide

Temperature-Dependent Exciton-Related Transition Energies Mediated by Carrier Concentrations in Unintentionally Al-Doped Zno Films

Donor and Acceptor Competitions in Phosphorus-Doped ZnO

Donor–acceptor Pair Luminescence of Nitrogen Doping P-Type ZnO by Plasma-Assisted Molecular Beam Epitaxy

P-Type Behavior in Na-doped ZnO Films and ZnO Homojunction Light-Emitting Diodes

Photoluminescence Investigation of the Carrier Recombination Processes in Zno Quantum Dots and Nanocrystals

ZnO with p-Type Doping: Recent Approaches and Applications

Identification of Acceptor States in Li-Doped P-Type Zno Thin Films

Suppression Of Compensation From Nitrogen And Carbon Related Defects For P-Type N-Doped Zno

Interband Carrier Recombination Mechanism in Al-doped ZnO

Co-doping: an Effective Strategy for Achieving Stable P-Type ZnO Thin Films