Temperature-Dependent Exciton-Related Transition Energies Mediated by Carrier Concentrations in Unintentionally Al-Doped Zno Films

Kun Tang,Shulin Gu,Jiandong Ye,Shimin Huang,Ran Gu,Shunming Zhu,Rong Zhang,Yi Shi,Youdou Zheng

DOI: https://doi.org/10.1063/1.4809669

IF: 4

2013-01-01

Applied Physics Letters

Abstract:The authors reported on a carrier-concentration mediation of exciton-related radiative transition energies in Al-doped ZnO films utilizing temperature-dependent (TD) photoluminescence and TD Hall-effect characterizations. The transition energies of free and donor bound excitons consistently change with the measured TD carrier concentrations. Such a carrier-concentration mediation effect can be well described from the view of heavy-doping-induced free-carrier screening and band gap renormalization effects. This study gives an important development to the currently known optical properties of ZnO materials.