Abstract:Abstract The measured lifetimes for the decay of excitons bound to a variety of neutral acceptors in ZnTe reveal a complex trend with increase in the acceptor binding energy E A . The lifetimes increase with E A up to > 0.15 eV, in a manner expected for radiative transitions because of the decrease in the giant oscillator strength of the transition with increase in localisation of the electronic particles. Although rather few well‐identified acceptor species are available with E A > 0.15 eV, it is clear that this trend of lifetime is sharply reversed in this range, as expected if the Auger (non‐radiative) recombination rate overtakes the decreasing radiative rate near E A ≈ 0.15 eV. Comparisons with other available data from direct and indirect gap semiconductors support this relationship between the transition rates. Therefore, a much more significant role for Auger recombinations is found in bound exciton and other transitions involving more than two electronic particles than previously recognised for direct gap semiconductors. Die Abhängigkeit der gemessenen Lebensdauern gebundener Exzitonen an verschiedenen neutralen Akzeptoren in ZnTe von der Akzeptorbindungsenergie E A zeigt zwei Bereiche: bis etwa 0,15 eV nehmen die Lebensdauern mit E A zu, wie man es für strahlende Übergänge aufgrund der Abnahme der “giant oscillator strength” mit zunehmender Lokalisierung der Ladungsträger erwartet. Obwohl es nur wenige wohlbekannte Akzeptoren mit größerer Bindungsenergie gibt, erweist sich eindeutig, daß sich dieses Verhalten oberhalb E A ≧ 0,15 eV umkehrt, wie zu erwarten ist, wenn die nichtstrahlende Auger‐Rekombination die strahlende Übergangsrate ab etwa E A ≈ 0,15 eV übertrifft. Vergleiche mit Daten anderer Halbleiter mit direkter und indirekter Band‐struktur bestätigen diese Beziehung zwischen den Übergangsraten. Diese Ergebnisse zeigen, daß die Auger‐Rekombination bei gebundenen Exzitonen und anderen Übergängen mit mehr als zwei Ladungsträgern in Halbleitern mit direkter Bandstruktur eine viel größere Rolle spielt als bisher angenommen wurde.

Two-electron-satellite Transition of Donor Bound Exciton in ZnO: Radiative Auger Effect

Photoluminescence Study Of The Annihilation Process Of Donor-Bound Excitons In Zno: Observation Of Quantum Mechanical Interference

Temperature-Dependent Exciton-Related Transition Energies Mediated by Carrier Concentrations in Unintentionally Al-Doped Zno Films

Calculation of Excitonic Transitions in ZnO/MgZnO Quantum-Well Heterostructures

Exciton States and Interband Optical Transitions in ZnO/MgZnO Quantum Dots

Two-dimensional Electron Gas Related Emissions in ZnMgO/ZnO Heterostructures

Spectroscopy of Single Donors at ZnO(0001) Surfaces.

Self-trapped Exciton Emission in an Sn(II)-doped All-Inorganic Zero-Dimensional Zinc Halide Perovskite Variant.

Highly enhanced exciton recombination rate by strong electron-phonon coupling in single ZnTe nanobelt.

Recombination Dynamics and Pronounced Re-Absorption Effect in ZnO Single Crystals under Two-Photon Excitation

Photoluminescence and Resonant Raman Scattering in N-doped ZnO Thin Films

Enhanced Exciton Binding Energy of ZnO by Long-Distance Perturbation of Doped Be Atoms.

Shallow Donor Ionization Energy in Sn-Doped ZnO Nanobelts

Contributions to the optical linewidth of shallow donor-bound excitonic transition in ZnO

Dynamics of bound exciton complexes in CdS nanobelts.

Shallow-acceptor, donor, free-exciton, and bound-exciton states in high-purity zinc telluride

Excitonic effects in the linear and nonlinear optical properties of ZnO@WS2 heterojunction films under photoexcitation

Bound Exciton Time Decay and the Auger Effect in Zinc Telluride

Temperature Dependent Photoluminescence of ZnO Single Crystals

Dynamics of exciton energy renormalization in monolayer transition metal disulfides

Determination of Absorption Coefficients and Urbach Tail Depth of ZnO below the Bandgap with Two-Photon Photoluminescence.