Abstract:Measurements of the Hall coefficient and the electrical conductivity of single-crystal specimens of n-type ZnO at temperatures between 55°K and 300°K are reported. An analysis of carrier concentration vs temperature indicates that "as-grown" crystals contain more than one active donor. Crystals with low initial donor concentrations were doped with H or interstitial Zn or Li, allowing a single-donor-level analysis. Doping was accomplished by interstitial diffusion followed by a rapid quench. Each of the added donors gives rise to a hydrogen-atom-model donor center whose ionization energy is ED=0.051 ev for ND<5×1016 cm-3. Lithium was also found to introduce a small concentration of acceptors, presumably due to an exchange between interstitial and substitutional positions. The quantity (m(N)m)32D-1, where m(N)=density-of-states'' effective mass and D=donor degeneracy , was found to be about 0.19 for all three donors, indicating that if D=2 then m(N)=0.5. The low-frequency dielectric constant of ZnO was redetermined as κ=8.5. The effective mass associated with the electron found in a hydrogen-like orbit is then m(H)=0.27m, and the observed decrease of ED with increasing ND corresponds to the overlap of these large orbits. The Hall mobility is 180 cm2 volt-1 sec-1 at 300°K and increases with decreasing temperature. It has been analyzed for lattice and impurity scattering. The optical-mode scattering mobility has been calculated from both the perturbation and intermediate-coupling theories making use of the effective mass, m(H), so that no adjustable parameters were included. The two theories agree for ZnO since it turns out to have a polar-mode electron coupling constant of α=1. The mobility so obtained is in good agreement with experiment and indicates that optical-mode scattering is important above 200°K. Some acoustical-mode scattering also appears to be present. At low temperatures the mobility appears to be limited by impurity scattering.

The exciton spectrum of zinc oxide

Effect of Solution Concentrations on Crystal Structure, Surface Topographies and Photoluminescence Properties of ZnO Thin Films

Temperature dependent exciton photoluminescence of bulk ZnO

Temperature Dependent Distinct Coupling and Dispersions of Heavy- and Light-Hole Excitonic Polaritons in ZnO

Calculation of Excitonic Transitions in ZnO/MgZnO Quantum-Well Heterostructures

Pressure Behaviour of the UV and Green Emission Bands in ZnO Micro‐rods

Optical interband transitions in Zn2TiO4 single crystals

Further characterization of oxygen vacancies and zinc vacancies in electron-irradiated ZnO

Temperature Dependent Photoluminescence of ZnO Single Crystals

An EPR study of point defects in zinc oxide thin films

Two-electron-satellite Transition of Donor Bound Exciton in ZnO: Radiative Auger Effect

Shallow-acceptor, donor, free-exciton, and bound-exciton states in high-purity zinc telluride

Green Luminescence Band in Zno: Fine Structures, Electron-Phonon Coupling, and Temperature Effect

Optical and Luminescence Properties of Zinc Oxide

Recombination Dynamics and Pronounced Re-Absorption Effect in ZnO Single Crystals under Two-Photon Excitation

The incident photons cut-off energy, the optical linear equations and the electron phonon interactions in ZnO thin films annealed at different temperatures

Excitation-intensity and Temperature Dependences of Photoluminescence in ZnMgO Film

The decay of the green fluorescence of copper in zinc oxide under selective excitation

Exciton States and Interband Optical Transitions in ZnO/MgZnO Quantum Dots

Hall Effect Studies of Doped Zinc Oxide Single Crystals

Calculated optical properties of Co in ZnO: internal and ionization transitions