An EPR study of point defects in zinc oxide thin films

jinan Fadel Mohammed Ali heydari,Mehmet Hikmet YÜKSELİCİ
DOI: https://doi.org/10.1088/2053-1591/ad5a6a
IF: 2.025
2024-06-21
Materials Research Express
Abstract:We studied ZnO thin films deposited on glass slides by thermal evaporation in vacuum followed by heat treatment in open air or Ar flow. The samples were characterized using X-ray diffraction, Raman scattering, photoluminescence (PL), and electron paramagnetic resonance (EPR) spectroscopy. We observed a broad PL band in the visible region at spectral positions of 504 and 560 nm and a low-intensity band in the UV region at 390 nm. The EPR spectra display a clear first derivative structure at g=1.96 at temperatures below 200 K. The PL spectrum shows red-shifted valence to conduction band emission due to electron hole recombination through shallow surface states. We found an activation energy of Ea=4.2 meV using the Arrhenius plot and estimated concentrations of paramagnetic defects and spin-spin relaxation time constants of 1016/m3 and 10-14/s, respectively.
materials science, multidisciplinary
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