Abstract:ZnO and ZnO thin films doped with different Mg contents (0.81at%,2.43at% and 4.05at%) were fabricated by radio frequency-magnetron sputtering (RF-MS) on glass substrates at 450 °C. The microstructure, photoluminescence (PL), optical and electrical properties were investigated. The results show that ZnO and diluted Mg doped ZnO thin films present a hexagonal wurtzite structure with high crystal quality. In the short wavelength side of near band emission (NBE), a high energy emission band for 0.81at% and 2.43at% Mg doped thin films occurs together with NBE. The increasingly high energy band peak gradually covers the NBE peak with Mg doping increasing to 4.05at%. It is suggested that the energy of the electrons near the substituted Mg2+ increases, and these electrons occupy a higher energy level. However, the energy gap between conduction band and valance band still exists because the electrons energy near the un-substituted Zn2+ does not change. With the increasing doped Mg content, electrons in the higher energy level increase and predominate. Therefore, the reason for the increase in the band gap of Mg doped ZnO thin films can be attributed to the increase in the energy of electrons after Mg doping, together with the Burstein-Moss effect. Incidentally, all films exhibit a high average optical transmission (≥85%). The optical band gap of Mg doped ZnO thin films increases with the increasing Mg doping content and changes from 3.36 to 3.52 eV. The resistivity of the Mg doped films are 2.2×10-3, 3.4×10-3 and 8.1×10-3 Ω·cm for 0.81at%, 2.43at% and 4.05at% Mg contents, respectively.

Excitation-intensity and Temperature Dependences of Photoluminescence in ZnMgO Film

Preparation and Characterization of Mg-doped ZnO Thin Films by Sol–gel Method

COMPARISON OF ULTRAVIOLET PHOTOLUMINESCENCE CHARACTERISTICS BETWEEN MgZnO AND ZnO THIN FILMS

Microstructue and Optical Properties of Mg-doped ZnO Thin Films Prepared by Sol-gel Method

Effect of Solution Concentrations on Crystal Structure, Surface Topographies and Photoluminescence Properties of ZnO Thin Films

Temperature Dependent Photoluminescence of ZnO Single Crystals

Temperature dependent exciton photoluminescence of bulk ZnO

Photoluminescence Properties of ZnO/ZnMgO Multiple Quantum Wells under High Excitation

Electrophotoluminescence of Zno Film

Optical Properties of a -Plane Non-Polar Zn 1− X Mg X O/ZnO Multiple Quantum Wells with Different Barrier Compositions

Photoluminescence of diluted Mg doped ZnO thin films and band-gap change mechanisms

The effect of Mg doping concentration and annealing on the structure and luminescence properties of ZnO thin films

Preparation and Photoluminescent Properties of P-Type Li-doped ZnMgO Thin Films

Temperature dependence of exciton localization in ZnO/Zn 1-xMgxO multiple quantum wells with different barrier compositions

Photoluminescence and Resonant Raman Scattering in N-doped ZnO Thin Films

Impact of Exciton Dissociation on the Metal-Enhanced Photoluminescence in ZnO/ZnMgO Multiple Quantum Wells

Calculation of Excitonic Transitions in ZnO/MgZnO Quantum-Well Heterostructures

Localized Exciton Emission from ZnO Nanocrystalline Films

Resonant Raman scattering and photoluminescence from high-quality nanocrystalline ZnO thin films prepared by thermal oxidation of ZnS thin films

Room temperature UV emission of MgxZn1-xO films

Structural Characterization and Photoluminescent Properties of Zn 1- X Mg X O Films on Silicon