Abstract:ZnO and ZnO thin films doped with different Mg contents (0.81at%,2.43at% and 4.05at%) were fabricated by radio frequency-magnetron sputtering (RF-MS) on glass substrates at 450 °C. The microstructure, photoluminescence (PL), optical and electrical properties were investigated. The results show that ZnO and diluted Mg doped ZnO thin films present a hexagonal wurtzite structure with high crystal quality. In the short wavelength side of near band emission (NBE), a high energy emission band for 0.81at% and 2.43at% Mg doped thin films occurs together with NBE. The increasingly high energy band peak gradually covers the NBE peak with Mg doping increasing to 4.05at%. It is suggested that the energy of the electrons near the substituted Mg2+ increases, and these electrons occupy a higher energy level. However, the energy gap between conduction band and valance band still exists because the electrons energy near the un-substituted Zn2+ does not change. With the increasing doped Mg content, electrons in the higher energy level increase and predominate. Therefore, the reason for the increase in the band gap of Mg doped ZnO thin films can be attributed to the increase in the energy of electrons after Mg doping, together with the Burstein-Moss effect. Incidentally, all films exhibit a high average optical transmission (≥85%). The optical band gap of Mg doped ZnO thin films increases with the increasing Mg doping content and changes from 3.36 to 3.52 eV. The resistivity of the Mg doped films are 2.2×10-3, 3.4×10-3 and 8.1×10-3 Ω·cm for 0.81at%, 2.43at% and 4.05at% Mg contents, respectively.

The effect of Mg doping concentration and annealing on the structure and luminescence properties of ZnO thin films

Preparation and Characterization of Mg-doped ZnO Thin Films by Sol–gel Method

Microstructue and Optical Properties of Mg-doped ZnO Thin Films Prepared by Sol-gel Method

Effect of Magnesium Doping on the Light-Induced Hydrophilicity of Zno Thin Films

Effect of Solution Concentrations on Crystal Structure, Surface Topographies and Photoluminescence Properties of ZnO Thin Films

Effect of Annealing Atmosphere on Structure and Photoluminescence of ZnMgO Thin Films

Photoluminescence of diluted Mg doped ZnO thin films and band-gap change mechanisms

Effect of Annealing and Mg Content on the Microstructure and Optical Properties of Zn1-xMgxO Films

Influence of Fabrication Technique on Structure and Photoluminescence of Zn1-xMgxO Thin Films

Structural and optical properties of Mg‐doped ZnO thin films prepared by a modified Pechini method

Effects of Mg Content on the Optical Properties of MgZnO Fims

Effect of MgO doping on the luminescent properties of ZnO

The Effects of Nitrogen Ionization During Preparation and Oxygen Pressure During Annealing on the Morphology, Structure, and Luminescent Properties of Mg-doped ZnO Thin Films

Photoluminescence and structure properties of Zn<sub>1−<i>x</i></sub>Mg<sub><i>x</i></sub>O films grown by RF magnetron sputtering

Mg doping reduced full width at half maximum of the near-band-edge emission in Mg doped ZnO films

Structure and Optical Properties of Mg-doped ZnO Nanomaterials

The Effect of Mg and Al Co-Doping on the Structural and Photoelectric Properties of ZnO Thin Film

Effects of Thermal Treatment on the Properties of ZnO Films Deposited on MgO-buffered Si Substrates

Photoluminescence Characteristics of Zn1-xMgxO Films

Effect of Mg Content on Structural, Electrical, and Optical Properties of Li-doped Zn1−xMgxO Thin Films

Photoluminescence and structure properties of Zn1?xMgxO films grown by RF magnetron sputtering