Photoluminescence Properties of ZnO/ZnMgO Multiple Quantum Wells under High Excitation

Binbin Su,Haiping He,Honghai Zhang,Xinhua Pan,Zhizhen Ye

DOI: https://doi.org/10.1016/j.spmi.2020.106418

IF: 3.22

2020-01-01

Superlattices and Microstructures

Abstract:ZnO/ZnMgO multiple quantum wells (MQWs) were grown on c-plane sapphire substrates by plasma-assisted molecular beam epitaxy. Optical properties of the MQWs under high excitation were investigated by temperature- and excitation intensity-dependent photoluminescence spectroscopy. For weak confinement, increasing the excitation intensity leads to escape of excitons from the MQWs and appearance of ZnMgO barrier emission. While for better confinement, the ZnMgO barrier emission is almost independent on temperature and excitation intensity. The internal quantum efficiency of the MQWs increases monotonously with excitation intensity, reaching a highest value of 47% at room temperature, which suggests high quality of the MQWs.