Room-temperature Photoluminescence from ZnO∕ZnMgO Multiple Quantum Wells Grown on Si(111) Substrates

X. Q. Gu,L. P. Zhu,Z. Z. Ye,H. P. He,Y. Z. Zhang,F. Huang,M. X. Qiu,Y. J. Zeng,F. Liu,W. Jaeger
DOI: https://doi.org/10.1063/1.2755922
IF: 4
2007-01-01
Applied Physics Letters
Abstract:A set of ten-period ZnO∕Zn0.85Mg0.15O multiple quantum wells with well thickness varying from 2.5to5nm has been grown on Si(111) substrates by pulsed laser deposition. A periodic structure with sharp interfaces was observed by cross-sectional transmission electron microscopy. The room-temperature photoluminescence resulting from the well regions exhibits a significant blueshift with respect to the ZnO single layer. The well layer thickness dependence of the emission energy from the well regions was investigated and compared with a simple theoretical model. The results suggest that the quantum confinement effects in the quantum wells can be observed up to room temperature.
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