Abstract:1D In-doped ZnO (IZO) nanostructures with different morphologies, namely nanowires, nanoseries(serial), nanorods and nanoprisms, have been successfully synthesized by chemical vapour deposition method. The structural, morphology and optical properties of IZO nanowires have been characterized. The ultrafast nonlinear optical and carrier dynamics characteristics of IZO were studied using femtosecond Z-scan, time-resolved photoluminescence (TRPL) and two-color pump-probe (TCPP) technique, respectively. The TRPL showed that the luminescence decay lifetimes of about several 10 ps and nanoseconds time response scale can be attributed to the shallow trap (ST) state, and deep trap (DT) state emissions, respectively. The mechanisms of the TRPL behavior in the different emission band were analyzed. The result of TCPP experiment showed that the bleach recovery with lifetimes on the fast (100-200 ps), and slow (>1 ns) time scale, caused by the shallow donor mixed with donor bound recombination, and donor acceptor pair recombination (DAP), respectively. The optical transition process in the IZO nanostructures has demonstrated that the energy transfer process from the host electron-hole pairs can efficiently excite the metal ions. Comparing with the results obtained from the TRPL experiment, we found the fast decay process was resulted from the exciton migration and the slow decay to the recombination process of the relaxed excitons. Our results show that IZO nanostructures are a promising candidate in further optoelectronic device applications. (C) 2018 Elsevier B.V. All rights reserved.

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