Abstract:Abstract The measured lifetimes for the decay of excitons bound to a variety of neutral acceptors in ZnTe reveal a complex trend with increase in the acceptor binding energy E A . The lifetimes increase with E A up to > 0.15 eV, in a manner expected for radiative transitions because of the decrease in the giant oscillator strength of the transition with increase in localisation of the electronic particles. Although rather few well‐identified acceptor species are available with E A > 0.15 eV, it is clear that this trend of lifetime is sharply reversed in this range, as expected if the Auger (non‐radiative) recombination rate overtakes the decreasing radiative rate near E A ≈ 0.15 eV. Comparisons with other available data from direct and indirect gap semiconductors support this relationship between the transition rates. Therefore, a much more significant role for Auger recombinations is found in bound exciton and other transitions involving more than two electronic particles than previously recognised for direct gap semiconductors. Die Abhängigkeit der gemessenen Lebensdauern gebundener Exzitonen an verschiedenen neutralen Akzeptoren in ZnTe von der Akzeptorbindungsenergie E A zeigt zwei Bereiche: bis etwa 0,15 eV nehmen die Lebensdauern mit E A zu, wie man es für strahlende Übergänge aufgrund der Abnahme der “giant oscillator strength” mit zunehmender Lokalisierung der Ladungsträger erwartet. Obwohl es nur wenige wohlbekannte Akzeptoren mit größerer Bindungsenergie gibt, erweist sich eindeutig, daß sich dieses Verhalten oberhalb E A ≧ 0,15 eV umkehrt, wie zu erwarten ist, wenn die nichtstrahlende Auger‐Rekombination die strahlende Übergangsrate ab etwa E A ≈ 0,15 eV übertrifft. Vergleiche mit Daten anderer Halbleiter mit direkter und indirekter Band‐struktur bestätigen diese Beziehung zwischen den Übergangsraten. Diese Ergebnisse zeigen, daß die Auger‐Rekombination bei gebundenen Exzitonen und anderen Übergängen mit mehr als zwei Ladungsträgern in Halbleitern mit direkter Bandstruktur eine viel größere Rolle spielt als bisher angenommen wurde.

Bound Exciton Time Decay and the Auger Effect in Zinc Telluride

Thermal Activation of Non-Radiative Auger Recombination in Charged Colloidal Nanocrystals

Spin Dephasing of Fluorine-Bound Electrons in ZnSe

The interplay between electron tunneling and Auger emission in a single quantum emitter weakly coupled to an electron reservoir

Highly enhanced exciton recombination rate by strong electron-phonon coupling in single ZnTe nanobelt.

Two-electron-satellite Transition of Donor Bound Exciton in ZnO: Radiative Auger Effect

Shallow-acceptor, donor, free-exciton, and bound-exciton states in high-purity zinc telluride

Auger Recombination in Self-Assembled Quantum Dots: Quenching and Broadening of the Charged Exciton Transition

The decay of the green fluorescence of copper in zinc oxide under selective excitation

Binding Energy of Charged Excitons in ZnSe-based Quantum Wells

Auger Recombination Lifetime Scaling for Type-I and Quasi-Type-II Core/Shell Quantum Dots

Auger-Mediated Electron Relaxation is Robust to Deep Hole Traps: Time-Domain Ab Initio Study of CdSe Quantum Dots

Recombination Dynamics and Pronounced Re-Absorption Effect in ZnO Single Crystals under Two-Photon Excitation

Recombination Property of Nitrogen-Acceptor-bound States in ZnO

Ab initio computation of Auger decay in heavy metals: zinc about it

Experimental Observation of Non-Exponential Auger-Meitner Decay of Inner-Shell-Excited CO

Exciton Radiative Lifetime in Transition Metal Dichalcogenide Monolayers

Auger and spin dynamics in a self-assembled quantum dot

Photogenerated Excitons in Plain Core CdSe Nanocrystals with Unity Radiative Decay in Single Channel: the Effects of Surface and Ligands.

Recombination Kinetics of Te Isoelectronic Centers in ZnSTe