Abstract:Activation of shallow acceptor state has been observed in ion irradiated and subsequently air annealed polycrystalline ZnO material. Low temperature photoluminescence (PL) spectrum of the sample exhibits clear signature of acceptor bound exciton (ABX) emission at 3.360 eV. The other two samples, pristine and ion irradiated (without annealing), however, do not show acceptor related PL emission in the nearby energy region. Electron transition from shallow donor (most probable site is interstitial zinc for undoped ZnO) to such newly formed shallow acceptor state creates new donor-acceptor pair (DAP) luminescence peak ~ 3.229 eV. ABX and DAP peak energy positions confirm that the acceptor is N related. The acceptor exciton binding energy has been estimated to be 180 +/- 15 meV which is in conformity with earlier reports. The activation of shallow acceptors without any source of atomic nitrogen can only be possible through diffusion of molecular nitrogen inside the sample during annealing. The N2 molecules get trapped at bulk defect sites incorporated by ion irradiation and subsequent annealing. X-ray diffraction (XRD) and Raman spectroscopic (RS) investigation have been employed to probe the changing defective nature of the ZnO samples. Irradiation induced increased disorder has been detected (both by XRD and RS) which is partially removed/modified by annealing at 300 oC. Simultaneous activation of molecular nitrogen acceptor in purposefully defective ZnO is the key finding of this work. Results presented here provide a simple but controlled way of producing shallow acceptor state in ZnO. If optimized through suitable choice of ion, its energy and fluence as well as the annealing temperature, this methodology can trigger further scope to fabricate devices using ZnO epitaxial thin films or nanowires.

Recombination Property of Nitrogen-Acceptor-bound States in ZnO

Recombination Dynamics and Pronounced Re-Absorption Effect in ZnO Single Crystals under Two-Photon Excitation

Highly enhanced exciton recombination rate by strong electron-phonon coupling in single ZnTe nanobelt.

Photoluminescence Investigation of the Carrier Recombination Processes in Zno Quantum Dots and Nanocrystals

Photoluminescence and Resonant Raman Scattering in N-doped ZnO Thin Films

Recombination Dynamics of Excitons in Zno/Znmgo Multiple Quantum Wells Grown on Silicon Substrate

Experimental Investigation on Nitrogen Related Complex Acceptors in Nitrogen-Doped ZnO Films

Photoluminescence Study Of The Annihilation Process Of Donor-Bound Excitons In Zno: Observation Of Quantum Mechanical Interference

Nature of Red Luminescence Band in Research-Grade ZnO Single Crystals: A “Self-Activated” Configurational Transition

Formation Dynamics of Excitons and Temporal Behaviors of Fano Resonance Due to the Exciton-Impurity-phonon Configuration Interaction in ZnO.

Emission Bands of Nitrogen-Implantation Induced Luminescent Centers in ZnO Crystals: Experiment and Theory

Generation of Nitrogen Acceptors in ZnO Using Pulse Thermal Processing

Recombination Kinetics of Te Isoelectronic Centers in ZnSTe

Nitrogen Binding Behavior in ZnO Films with Time-Resolved Cathodoluminescence

Transiently controlled emission from ZnO surface

Electronic structure of defects and doping in ZnO: Oxygen vacancy and nitrogen doping

On quantitative analysis of interband recombination dynamics: Theory and application to bulk ZnO

Shallow acceptor state in ZnO realized by simple irradiation and annealing route

Photoluminescence Properties of Zno Nanoneedles Grown by Metal Organic Chemical Vapor Deposition

Surface effects on photoluminescence of single ZnO nanowires

Correlation Between Carrier Recombination and P-Type Doping in P Monodoped and In–P Codoped ZnO Epilayers