On quantitative analysis of interband recombination dynamics: Theory and application to bulk ZnO

S. Lettieri,V. Capello,L. Santamaria,P. Maddalena

DOI: https://doi.org/10.1063/1.4847615

2013-12-20

Abstract:The issue of the quantitative analysis of time-resolved photoluminescence experiments is addressed by developing and describing two approaches for determination of unimolecular lifetime, bimolecular recombination coefficient, and equilibrium free-carrier concentration, based on a quite general second-order expression of the electron-hole recombination rate. Application to the case of band-edge emission of ZnO single crystals is reported, evidencing the signature of sub-nanosecond second-order recombination dynamics for optical transitions close to the interband excitation edge. The resulting findings are in good agreement with the model prediction and further confirm the presence, formerly evidenced in literature by non-optical methods, of near-surface conductive layers in ZnO crystals with sheet charge densities of about 3÷5*10^13 cm^-2

Materials Science

What problem does this paper attempt to address?

The main problem that this paper attempts to solve is to determine the non - representational physical parameters describing electron - hole recombination dynamics through quantitative analysis of time - resolved photoluminescence (TRPL) experiments. Specifically, the authors developed and described two methods to determine the single - molecule lifetime, bimolecular recombination coefficient, and equilibrium free - carrier concentration. These parameters are based on a general second - order electron - hole recombination rate expression.

### Main problems:
1. **Quantitative analysis of TRPL experiments**: Traditional TRPL data analysis usually relies on empirical multi - exponential fitting, which fails to provide a deep understanding of the actual physical processes. Therefore, the authors hope to extract the actual physical parameters through a more accurate model.
2. **Recombination dynamics in ZnO crystals**: Especially for ZnO single crystals, in the band - edge emission region (i.e., where the photon energy is higher than the exciton peak), a kinetic behavior different from the traditional multi - exponential decay has been observed. This behavior indicates that a second - order recombination mechanism may exist.

### Research background:
- **Photoluminescence (PL) spectra** is a commonly used optical characterization technique for detecting band - gap energy, defect energy levels, identifying impurities, and providing information on crystal quality and surface/interface properties.
- **Time - resolved photoluminescence (TRPL)** studies the recombination dynamics of excited states by detecting the change in PL emission intensity over time induced by an instantaneous optical excitation source.

### Research objectives:
- Develop and validate two methods to extract the single - molecule lifetime \(\tau\), bimolecular recombination coefficient \(b\), and equilibrium free - carrier density \(N\) from TRPL data.
- Apply these methods to study the recombination dynamics of ZnO single crystals in the high - energy region to confirm the existence of a near - surface conductive layer and estimate its carrier surface density.

### Method overview:
1. **Effective lifetime method**: Quickly estimate the recombination parameters by calculating the instantaneous effective lifetime \(\tau_{\text{eff}}\).
2. **Global fitting method**: Consider the TRPL curve as a function of time and excitation fluence, and simultaneously fit TRPL curves at different fluences to obtain more accurate parameter estimates.

### Results and conclusions:
- Using these two methods, the authors successfully extracted the single - molecule lifetime, bimolecular recombination coefficient, and equilibrium free - carrier density from the TRPL data of ZnO single crystals.
- The results show that second - order recombination dynamics indeed exists in ZnO crystals in the high - energy region, supporting the conclusion in the literature regarding the existence of a near - surface conductive layer.
- The calculated carrier surface density is consistent with previous research results, further validating the effectiveness of the model.

### Formula summary:
- Second - order recombination rate expression: \[ W(\rho)=\frac{\rho}{\tau}+b\rho^{2} \]
- Time evolution of excess carrier density: \[ \rho(t)=\frac{\rho_{0}\exp(-t / \tau)}{1+(b\rho_{0}\tau)(1-\exp(-t / \tau))} \]
- Initial effective lifetime formula: \[ \frac{1}{\tau_{\text{eff}}(0)}=\frac{1}{\tau}+\frac{b\rho_{0}}{1+\frac{\rho_{0}}{N}} \]

Through these methods and formulas, the authors not only provide an in - depth understanding of ZnO recombination dynamics but also offer a valuable reference for the research of other similar materials.