A theory of edge-emission phenomena in CdS, ZnS and ZnO

J.J. Hopfield
DOI: https://doi.org/10.1016/0022-3697(59)90064-2
IF: 4.383
1959-07-01
Journal of Physics and Chemistry of Solids
Abstract:Tentative symmetry assignments of p valence bands and s conduction bands can be made for ZnO and CdS on the basis of a tight-binding model. The six-fold degenerate p-bands are split in hexagonal crystals into a four-fold degenerate and a two-fold degenerate band. The fourfold degeneracy is split by spin-orbit coupling. The polarization of recombination radiation depends upon which band the hole belongs to, and is almost independent of the recombination mechanism. The polarization of the edge emission (the series of equally spaced emission lines) should be strongly temperature-dependent. Quantitative agreement is obtained between the predictions of this band model for CdS and the edge-emission polarization experiments of Dutton (J. Phys. Chem. Solids6, 101 (1958)). It is shown that the spectra of edge-emission cannot be reasonably explained without the introduction of impurities or surfaces to absorb crystal momentum. In CdS, recombination from a shallow trap seems necessary to explain the large coupling to the lattice apparent in the observed emission spectrum. The edge-emission spectrum should approximate a Poisson distribution for recombination from a trap. The mean number of emitted phonons is a measure of the radius of the trapped carrier-wave function.
physics, condensed matter,chemistry, multidisciplinary
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