Abstract:Current knowledge of the intrinsic defect properties of Cu2ZnSnS4 (CZTS) is limited, which is hindering further improvement of the performance of CZTS-based solar cells. Here, we have performed first-principles calculations for a series of intrinsic defects and defect complexes in CZTS, from which we have the following observations. (i) It is important to control the elemental chemical potentials during crystal growth to avoid the formation of secondary phases such as ZnS, CuS, and Cu2SnS3. (ii) The intrinsic p-type conductivity is attributed to the Cu-Zn antisite which has a lower formation energy and relatively deeper acceptor level compared to the Cu vacancy. (iii) The low formation energy of many of the acceptor defects will lead to the intrinsic p-type character, i.e., n-type doping is very difficult in this system. (iv) The role of electrically neutral defect complexes is predicted to be important, because they have remarkably low formation energies and electronically passivate deep levels in the band gap. For example, [Cu-Zn(-) + Zn-Cu(+)], [V-Cu(-) + Zn-Cu(+)], and [Zn-Sn(2-) + 2Zn(Cu)(+)] may form easily in nonstoichiometric samples. The band alignment between Cu2ZnSnS4, CuInSe2 and the solar-cell window layer CdS has also been calculated, revealing that a type-II band alignment exists for the CdS/Cu2ZnSnS4 heterojunction. The fundamental differences between CZTS and CuInSe2 for use in thin-film photovoltaics are discussed. The results are expected to be relevant to other I-2-II-IV-VI4 semiconductors.

Band Bending Independent of Surface Passivation in ZnO/CdS/Cu(In,Ga)(S,Se)$_2$ Heterojunctions and Cr/Cu(In,Ga)(S,Se)$_2$ Schottky Contacts

Spectroscopy of electronic defect states in Cu(In, Ga)(S, Se)$_2$-based heterojunctions and Schottky diodes under damp-heat exposure

The band alignment at CdS/Cu<sub>2</sub> ZnSnSe<sub>4</sub> heterojunction interface

Optoeletronic Investigation of Cu 2 ZnSn(S,Se) 4 Thin-Films & Cu 2 Zn Sn(S,Se) 4 /cds Interface with Scanning Probe Microscopy

Band-Offsets at CdCr2Se4-(AlGa)As and CdCr2Se4-ZnSe Interfaces

Band offsets and point-defect charges of the aluminum and hafnium oxides in contact with the Cu(In,Ga)Se2chalcopyrite

The band alignment at CdS/Cu2ZnSnSe4 heterojunction interface

Mapping the Energetics of Defect States in Cu2ZnSnS4 films and the Impact of Sb Doping

Band Alignments at Interface of Cu2znsns4/Zno Heterojunction: an X-Ray Photoelectron Spectroscopy and First-Principles Study

Band Alignment and Band Bending at Α-Ga2o3/zno N-N Isotype Hetero-Interface

Revisiting the Zinc-Blende/Wurtzite Heterocrystalline Structure in CdS

ZnSe/GaAs(001) heterostructures with defected interfaces: structural, thermodynamic and electronic properties

Morphology, chemistry, and band bending at Ag– and In–(100)GaSb interfaces

Intrinsic Point Defects and Complexes in the Quaternary Kesterite Semiconductorcu2znsns4

Interface band gap narrowing behind open circuit voltage losses in Cu$_2$ZnSnS$_4$ solar cells

Enhanced Conductivity Along Lateral Homojunction Interfaces of Atomically Thin Semiconductors

Deep-level Transient Spectroscopic Studies of ZnSe - GaAs Heterointerfaces

The Band Offset at CdS/Cu 2 ZnSnS 4 Heterojunction Interface

Electronic properties of chalcogenide semiconductor nanostructures and thin-films

Band bending at interfaces between topological insulator Bi2Se3 and transition metals

Dangling bond defects on Si surfaces and their consequences on energy band diagrams: from a photoelectrochemical perspective