Abstract:Single-Dirac-cone topological insulators (TI) are the first experimentally discovered class of three dimensional topologically ordered electronic systems, and feature robust, massless spin-helical conducting surface states that appear at any interface between a topological insulator and normal matter that lacks the topological insulator ordering. This topologically defined surface environment has been theoretically identified as a promising platform for observing a wide range of new physical phenomena, and possesses ideal properties for advanced electronics such as spin-polarized conductivity and suppressed scattering. A key missing step in enabling these applications is to understand how topologically ordered electrons respond to the interfaces and surface structures that constitute a device. Here we explore this question by using the surface deposition of cathode (Cu/In/Fe) and anode materials (NO$_2$) and control of bulk doping in Bi$_2$Se$_3$ from P-type to N-type charge transport regimes to generate a range of topological insulator interface scenarios that are fundamental to device development. The interplay of conventional semiconductor junction physics and three dimensional topological electronic order is observed to generate novel junction behaviors that go beyond the doped-insulator paradigm of conventional semiconductor devices and greatly alter the known spin-orbit interface phenomenon of Rashba splitting. Our measurements for the first time reveal new classes of diode-like configurations that can create a gap in the interface electron density near a topological Dirac point and systematically modify the topological surface state Dirac velocity, allowing far reaching control of spin-textured helical Dirac electrons inside the interface and creating advantages for TI superconductors as a Majorana fermion platform over spin-orbit semiconductors.

Band bending at interfaces between topological insulator Bi2Se3 and transition metals

Coexistence of the topological state and a two-dimensional electron gas on the surface of Bi 2 Se 3

Electron dynamics in topological insulator based semiconductor-metal interfaces (topological p-n interface based on Bi2Se3 class)

A computational investigation of topological insulator Bi2Se3 film

Observations of a metal-insulator transition and strong surface states in Bi2-x SbxSe3 thin films.

Topological Surface State Evolution in Bi2Se3 via Surface Etching

Topological Surface State Evolution in Bi_2Se_3 Via Surface Etching

Electron dynamics in topological insulator semiconductor-metal interfaces (topological pn interface)

Manipulating Topological Properties in Bi$_2$Se$_3$/BiSe/TMDC Heterostructures with Interface Charge Transfer

Exotic Topological Insulator States and Topological Phase Transitions in Sb2se3-Bi2se3 Heterostructures

Superconductivity at Pd/Bi2Se3 Interfaces Due to Self-Formed PdBiSe Interlayers

Dirac cone shift of a passivated topological Bi2Se3 interface state

Band Structure Engineering in (Bi(1-X)sb(x))(2)te(3) Ternary Topological Insulators.

Topological Surface State Evolution in Bi$_2$Se$_3$ via Surface Etching

Crossover Between Weak Antilocalization and Weak Localization of Bulk States in Ultrathin Bi2Se3 Films

Interplay between topological insulators and superconductors

Direct observation of band bending in topological insulator Bi2Se3

Magnetically Doped Semiconducting Topological Insulators

Topological Surface State Evolution in Bi 2 Se 3 via Surface Etching

Metal-Insulator Transition in Variably Doped (Bi1-xSbx)2Se3 Nanosheets

Separation of Top and Bottom Surface Conduction in Bi2te3 Thin Films