Abstract:We report a low-temperature magneto transport study of Bi2Se3 thin films of different thicknesses (40, 80 and 160 nm), deposited on sapphire (0001) substrates, using radio frequency magnetron sputtering technique. The high-resolution x-ray diffraction measurements revealed the growth of rhombohedral c-axis {0003n} oriented Bi2Se3 films on sapphire (0001). Vibrational modes of Bi2Se3 thin films were obtained in the low wavenumber region using Raman spectroscopy. The surface roughness of sputtered Bi2Se3 thin films on sapphire (0001) substrates were obtained to be ~ 2.26-6.45 nm. The chemical and electronic state of the deposited Bi2Se3 was confirmed by X-ray photoelectron spectroscopy and it showed the formation of Bi2Se3 compound. Resistivity versus temperature measurements show the metallic nature of Bi2Se3 films and a slight up-turn transition in resistivity at lower temperatures < 25 K. The positive magneto-resistance value of Bi2Se3 films measured at low temperatures (2-100 K) confirmed the gapless topological surface states in Bi2Se3 thin films. The quantum correction to the magnetoconductivity of thin films in low magnetic field is done by employing Hikami-Larkin-Nagaoka theory and the calculated value of coefficient 'α' (defining number of conduction channels) was found to be 0.65, 0.83 and 1.56 for film thickness of 40, 80 and 160 nm, respectively. These observations indicate that the top and bottom surface states are coupled with the bulk states and the conduction mechanism in Bi2Se3 thin films varied with the film thicknesses.

Crossover Between Weak Antilocalization and Weak Localization of Bulk States in Ultrathin Bi2Se3 Films

Crossover Between Weak Antilocalization and Weak Localization in a Magnetically Doped Topological Insulator

Electron interaction and localization in ultrathin topological insulator films

Weak Antilocalization And Electron-Electron Interaction In Coupled Multiple-Channel Transport In A Bi2se3 Thin Film

Weak Localization Effects As Evidence for Bulk Quantization in Bi 2 Se 3 Thin Films

Weak Anti-localization and Quantum Oscillations of Surface States in Topological Insulator Bi2Se2Te

Electron Interaction-Driven Insulating Ground State In Bi2se3 Topological Insulators In The Two-Dimensional Limit

Coexistence of Topological Edge State and Superconductivity in Bismuth Ultrathin Film

Coherent topological transport on the surface of Bi₂Se₃

Emerging Weak Localization Effects on A Topological Insulator-Insulating Ferromagnet (Bi2se3-Eus) Interface

Weak localization and anti-localization in rare earth doped topological insulators

Tunable Surface Conductivity In Bi2se3 Revealed In Diffusive Electron Transport

Emergence of a weak topological insulator from the Bi$_x$Se$_y$ family and the observation of weak anti-localization

Transition from weak antilocalization to linear magnetoresistance by tuning structure geometry and chemical potential in nanostructured Bi2Se3 films

Topological Quantum Weak Antilocalization Limit and Anomalous Hall Effect in Semimagnetic Bi2−xCrxSe3/Bi2Se3−yTey Heterostructure

Weak Antilocalization and Anisotropic Magnetoresistance as a Probe of Surface States in Topological Bi2TexSe3−x Thin Films

Signature of weak-antilocalization in sputtered topological insulator Bi2Se3 thin films with varying thickness

Weak antilocalization in Bi2(Se(x)Te(1-x))3 nanoribbons and nanoplates.

Nontrivial Surface State Transport In Bi2se3 Topological Insulator Nanoribbons

Interplay between topological insulators and superconductors

Observations of a metal-insulator transition and strong surface states in Bi2-x SbxSe3 thin films.