Electron interaction and localization in ultrathin topological insulator films

MinHao Liu,YaYu Wang
DOI: https://doi.org/10.1007/s11433-012-4941-0
2012-01-01
Abstract:In this article we review recent transport property studies on topological insulator thin films grown by molecular beam epitaxy. In pure Bi 2 Se 3 ultrathin films we find an insulating ground state in the presence of weak antilocalization, which indicates the relevance of electron interaction effect. In magnetically doped Bi 2 Se 3 film we observe a systematic crossover between weak localization and weak antilocalization with varied magnetic doping, temperature, and magnetic field. These results demonstrate the intricate interplay between topological delocalization, electron interaction, and broken time reversal symmetry in topological insulator thin films.
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