Abstract:Thin films of the topological insulator (BiSb)$_2$Te$_3$ oriented along the [0001] direction were grown via molecular beam epitaxy on substrates of Al$_2$O$_3$ (0001) and MgF$_2$ (110) single crystals, as well as on an epitaxial thin film of the antiferromagnetic insulator MnF$_2$ (110). Magnetoconductivity measurements of these samples showed close proximity of the Fermi level to the Dirac point and weak antilocalization at low temperature that was partially suppressed in the sample grown on the MnF$_2$ layer. The magnetoconductivity data were fit to a model that describes the quantum corrections to the conductivity for the Dirac surface state of a 3-dimensional topological insulator, from which values of the Fermi velocity and the phase coherence length of the surface state charge carriers were derived. The magnetoconductivity of the (BiSb)$_2$Te$_3$ - MnF$_2$ bilayer samples were fit to a model describing the crossover from weak antilocalization to weak localization due to magnetic doping. The results are consistent with the opening of an energy gap at the Dirac point in the (BiSb)$_2$Te$_3$ due to magnetic proximity interactions of the topological surface states with the antiferromagnetic MnF$_2$ insulator.

What problem does this paper attempt to address?

The main problem that this paper attempts to solve is to explore the suppression mechanism of weak anti - localization (WAL) behavior in the bilayer structure of topological insulator (BiSb)₂Te₃ and antiferromagnetic insulator MnF₂ thin layers. Specifically, the research aims to: 1. **Understand the reasons for the suppression of weak anti - localization behavior**: In the (BiSb)₂Te₃ - MnF₂ bilayer samples, it is observed that the weak anti - localization phenomenon is partially suppressed, while this phenomenon is obvious in the (BiSb)₂Te₃ thin films on non - magnetic substrates. The researchers proposed two possible explanations: - **Enhanced magnetic scattering**: The enhancement of magnetic scattering due to the local magnetic moments in the MnF₂ layer. - **Opening of the energy gap at the Dirac point**: Due to the proximity effect with antiferromagnetic MnF₂, an energy gap is opened at the Dirac point of the topological insulator surface states. 2. **Verify the applicability of theoretical models**: By fitting the experimental data to the quantum correction models considering two - dimensional Dirac states and strong spin - orbit coupling, verify whether these models can accurately describe the conductivity behavior of topological insulators. In particular: - Use the HLN model (Hikami - Larkin - Nagaoka model) to describe the weak localization and weak anti - localization phenomena in quasi - two - dimensional non - relativistic fermion systems. - Use the Dirac fermion model to describe the quantum corrections of the three - dimensional topological insulator surface states with strong spin - orbit coupling. 3. **Explore the interface magnetoelectric interaction**: Study the interface magnetoelectric interaction between the antiferromagnetic insulator MnF₂ and the topological insulator (BiSb)₂Te₃, especially the influence of this interaction on the electron transport properties of the surface states. This includes: - Explore how the existence of magnetic scattering sites affects the electron phase coherence length. - Evaluate the possibility of opening an energy gap at the Dirac point and its influence on the weak anti - localization behavior. 4. **Provide a basis for further research**: Through the above analysis, provide theoretical and technical bases for future in - depth research on the magnetoelectric interaction in the bilayer structure of topological insulators and antiferromagnetic insulators. In summary, the core objective of this research is to reveal the specific mechanism of the suppression of weak anti - localization behavior in the (BiSb)₂Te₃ - MnF₂ bilayer structure and verify the applicability and accuracy of existing theoretical models.

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