Emerging Weak Localization Effects on A Topological Insulator-Insulating Ferromagnet (Bi2se3-Eus) Interface

Qi I. Yang,Merav Dolev,Li Zhang,Jinfeng Zhao,Alexander D. Fried,Elizabeth Schemm,Min Liu,Alexander Palevski,Ann F. Marshall,Subhash H. Risbud,Aharon Kapitulnik
DOI: https://doi.org/10.1103/physrevb.88.081407
IF: 3.7
2013-01-01
Physical Review B
Abstract:Thin films of topological insulator Bi2Se3 were deposited directly on insulating ferromagnetic EuS. Unusual negative magnetoresistance was observed near the zero field below the Curie temperature T-C, resembling the weak localization effect; whereas the usual positive magnetoresistance was recovered above T-C. Such negative magnetoresistance was only observed for Bi2Se3 layers thinner than t similar to 4 nm, when its top and bottom surfaces are coupled. These results provide evidence for a proximity effect between a topological insulator and an insulating ferromagnet, laying the foundation for future realization of the half-integer quantized anomalous Hall effect in three-dimensional topological insulators.
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