Proximity Effect Between a Topological Insulator and a Magnetic Insulator with Large Perpendicular Anisotropy

Wenmin Yang,Shuo Yang,Qinghua Zhang,Yang Xu,Shipeng Shen,Jian Liao,Jing Teng,Cewen Nan,Lin Gu,Young Sun,Kehui Wu,Yongqing Li
DOI: https://doi.org/10.1063/1.4895073
IF: 4
2014-01-01
Applied Physics Letters
Abstract:We report that thin films of a prototype topological insulator, Bi$_{2}$Se$_{3}$, can be epitaxially grown onto the (0001) surface of BaFe$_{12}$O$_{19}$(BaM), a magnetic insulator with high Curie temperature and large perpendicular anisotropy. In the Bi$_2$Se$_3$ thin films grown on non-magnetic substrates, classic weak antilocalization (WAL) is manifested as cusp-shaped positive magnetoresistance (MR) in perpendicular magnetic fields and parabola-shaped positive MR in parallel fields, whereas in Bi$_{2}$Se$_{3}$/BaM heterostructures the low field MR is parabola-shaped, which is positive in perpendicular fields and negative in parallel fields. The magnetic field and temperature dependence of the MR is explained as a consequence of the suppression of WAL due to strong magnetic interactions at the Bi$_{2}$Se$_{3}$/BaM interface.
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