Weak localization and anti-localization in rare earth doped topological insulators

Zengji Yue,Kirrily Rule,Zhi Li,Weiyao Zhao,Lina Sang,Guangsai Yang,Cheng Tan,Lan Wang,Abuduliken Bake,Xiaolin Wang

DOI: https://doi.org/10.48550/arXiv.2008.03919

2020-08-10

Abstract:We study magneto-transport phenomena in two rare-earth doped topological insulators, SmxFexSb2-2xTe3 and SmxBi2-xTe2Se single crystals. The magneto-transport behaviours in both compounds exhibit a systematic crossover between weak anti-localization (positive magnetoresistance) and weak localization (negative magnetoresistance) with changes in temperatures and magnetic fields. The weak localization is caused by rare-earth-doping induced magnetization, and the weak anti-localization originates from topologically protected surface states. The transition between weak localization and weak anti-localization demonstrates a gap opening at the Dirac point of surface states in the quantum diffusive regime. This work demonstrates an effective way to manipulate the magneto-transport properties of the topological insulators by rare-earth element doping. Magnetometry measurements indicate that the Sm-dopant alone is paramagnetic, whereas the co-doped Fe-Sm state has short-range antiferromagnetic order. Our results hold potential for the realization of exotic topological effects in gapped topological insulator surface states.

Materials Science