Weak localization and anti-localization in rare earth doped topological insulators

Zengji Yue,Kirrily Rule,Zhi Li,Weiyao Zhao,Lina Sang,Guangsai Yang,Cheng Tan,Lan Wang,Abuduliken Bake,Xiaolin Wang

DOI: https://doi.org/10.48550/arXiv.2008.03919

2020-08-10

Abstract:We study magneto-transport phenomena in two rare-earth doped topological insulators, SmxFexSb2-2xTe3 and SmxBi2-xTe2Se single crystals. The magneto-transport behaviours in both compounds exhibit a systematic crossover between weak anti-localization (positive magnetoresistance) and weak localization (negative magnetoresistance) with changes in temperatures and magnetic fields. The weak localization is caused by rare-earth-doping induced magnetization, and the weak anti-localization originates from topologically protected surface states. The transition between weak localization and weak anti-localization demonstrates a gap opening at the Dirac point of surface states in the quantum diffusive regime. This work demonstrates an effective way to manipulate the magneto-transport properties of the topological insulators by rare-earth element doping. Magnetometry measurements indicate that the Sm-dopant alone is paramagnetic, whereas the co-doped Fe-Sm state has short-range antiferromagnetic order. Our results hold potential for the realization of exotic topological effects in gapped topological insulator surface states.

Materials Science

What problem does this paper attempt to address?

The problem that this paper attempts to solve is to explore the influence of rare - earth element doping on the magnetic transport properties of topological insulators (TIs), especially to study the transition between weak localization (WL) and weak anti - localization (WAL) phenomena. Specifically, by studying two single - crystal materials of rare - earth - doped topological insulators - Sm_xFe_xSb_2 - 2xTe_3 and Sm_xBi_2 - xTe_2Se, the author explored the magnetoresistance behavior of these materials at different temperatures and magnetic fields.

### Main problems include:
1. **Transition mechanism between WL and WAL**: The paper aims to explain why these materials exhibit a transition from negative magnetoresistance (WL) to positive magnetoresistance (WAL) under different temperature and magnetic field conditions.

2. **Opening of the surface - state energy gap**: To study whether the transition between WL and WAL is related to the opening of the energy gap of the topological insulator surface states, which is caused by the breaking of time - reversal symmetry (TRS).

3. **Effect of magnetic doping**: To explore the influence of co - doping of rare - earth elements (such as samarium Sm) and transition metals (such as iron Fe) on the magnetic and electronic structures of materials, especially how to regulate the magnetic transport properties of materials through doping.

4. **Possibility of achieving exotic topological effects**: The research results show the potential of regulating the surface states of topological insulators through rare - earth doping, which provides the possibility for further achieving exotic topological effects (such as the quantum anomalous Hall effect, QAHE).

### Specific research contents:
- **Material preparation**: High - quality Sm_xFe_xSb_2 - 2xTe_3 and Sm_xBi_2 - xTe_2Se single crystals were grown by the Bridgman method, and the crystal quality was confirmed by means such as X - ray diffraction (XRD), scanning electron microscopy (SEM) and energy - dispersive spectroscopy (EDS).

- **Magnetic transport measurement**: The resistance and magnetoresistance of materials were measured at different temperatures and magnetic fields to observe the transition of WL and WAL phenomena.

- **Magnetic measurement**: Through magnetic susceptibility measurement, the magnetic behavior of the doped materials, such as diamagnetism, paramagnetism and short - range antiferromagnetic order, was studied.

Through these studies, the author revealed the important influence of rare - earth doping on the magnetic transport properties of topological insulators and provided theoretical and experimental bases for the future design of new materials with special magnetic and electronic properties.