Abstract:The photoluminescence of ZnO epitaxial film grown by MBE method was investigated. Some obvious interference fringes were observed in the reflection spectrum of ZnO film at room temperature due to Fabry-Perot interference, the Fabry-Perot interference indicates that optical quality of the sample is very good. Using the empirical equation of refractive index, the thickness of the film is estimated about 800 nm. The PL spectrum of the ZnO was investigated under different excitation intensity using waveguide and backward configurations. In PL spectrum of waveguide configuration, six peaks at 383, 390, 392, 406, 438 and 502 nm were observed obviously. The peak at 392 nm appeared when excitation intensity is above certain values and then increased superlinearly. Wide spon-taneous emission was observed in PL spectrum in backward configurations with low intensity. With the increasing of the excitation intensity, a new peak at 392 nm appeared. With further increasing of the excitation intensity, another new peak at 396 nm appeared, its intensity increases rapidly, its location shifts to red and width of the peak is broaden with the increasing of excitation intensity. It is thought that mechanism of the two peaks is identical, which is due to both defect scattering and exciton-exciton scattering. It was analyzed that there are the angle dependence of photoluminescence and striking difference in spontaneous spectrum between the two different configurations. The spectrum using waveguide configuration is more structured. Two effects may be responsible for the experiment results: one is the wavelength selection effect due to the absorption of guided-mode in asymmetric waveguide;the other is Fabry-Perot like interference of the grazing light in substrate (micro-cavity effect). The theory results of the two different explanations are thought to be equal in the film plane.

Time-resolved Photoluminescence Study of a ZnO Thin Film Grown on a (100) Silicon Substrate

Recombination Dynamics of Excitons in Zno/Znmgo Multiple Quantum Wells Grown on Silicon Substrate

Recombination Dynamics and Pronounced Re-Absorption Effect in ZnO Single Crystals under Two-Photon Excitation

Photoluminescent Properties of ZnO Films Deposited on Si Substrates

Photoluminescence and time-resolved photoluminescence of star-shaped ZnO nanostructures

Photoluminescence Spectra of Nano-Structured ZnO Thin Films

Highly enhanced exciton recombination rate by strong electron-phonon coupling in single ZnTe nanobelt.

Stimulated Emission from Nanosized Polycrystalline ZnO and Its Time Resolution

Formation Dynamics of Excitons and Temporal Behaviors of Fano Resonance Due to the Exciton-Impurity-phonon Configuration Interaction in ZnO.

Picosecond Transient Photoluminescence Spectra of Znse-Zns Strained-Layer Superlattices Grown on Gaas(001) by Molecular-Beam Epitaxy

Localized Exciton Emission from ZnO Nanocrystalline Films

Transiently controlled emission from ZnO surface

The Photoluminescence, Ultrafast Nonlinear Optical Properties and Carrier Dynamics of 1D In-doped ZnO Nanostructures: Experiment and Mechanism

Temperature-Dependent Photoluminescence of Nanostructured ZnO

Time-Resolved Photoluminescence Characteristics of Subnanometer ZnO Clusters Confined in the Micropores of Zeolites

Temperature-Dependent Photoluminescence from ZnO/Zn0.85Mg0.15O Heterostructure Grown on Si(111) Substrates

Correlation Between Structure and Photoluminescence of C-Axis Oriented Nanocrystalline ZnO Films and Evolution of Photo-Generated Excitons

Exciton Hopping Probed by Picosecond Time-Resolved Cathodoluminescence

Photoluminescence Study of Sb-doped P-Type ZnO Films by Molecular-Beam Epitaxy

Different Luminescence Behavior Between the Surface and Edge of ZnO Film

Observation of "fast" and "slow" Decay Processes in Oxygen-Doped Hydrogenated Amorphous Silicon Nitride Thin Films