Abstract:ZnO has promising potential applications in optoelectronic industry, attributed to its direct wide band gap (3.37 eV) and high exciton binding energy (60 meV). Optoelectronic properties depend on a firm understanding of the physics of defects and impurities in ZnO. In this short review, we will discuss the progress in the defect and impurities emission of ZnO, and the extended properties determined by native defects as well as the remaining challenges. Experimental results illustrated that the green luminescence induced by V-O is peaked at 490 nm, while the typical emission around 503 nm correlates to DAP (donor-acceptor pair) recombination involving Cu+. As the isolated interstitial oxygen does not cause yellow emission, the interstitial zinc contributes to the 450 nm blue luminescence. For the V-Zn related luminescence, three peaks located at 414 nm, 525 nm and 600 nm can be expected, which originate from different charging state transition. Structured Cu-Zn emission around 500 nm is presented in ZnO particles with purity as high as 99.99%. Li impurity in ZnO has two emission peaks around 430 nm and 580 nm, caused by Li-i-Li-Zn and Li-Zn, respectively. N-O is a deep acceptor and contributes to the 730 nm red emission. The 550 nm luminescence in Al-doped ZnO can be ascribed to the Al-Zn-O-i complex. The blue emission and orange/red emission in C-doped ZnO originate from C and C based defect complex, respectively. The Si impurity affects the visible luminescence of ZnO is through tailoring native defects or formation of luminescent Zn2SiO4 phase. In contrast to the prevailing view that V-Zn induces the diluted ferromagnetism in ZnO, we illustrated that adsorption oxygen facilitates the d degrees magnetism in metal oxides system. The radiation tolerance of ZnO is found to be determined by the interstitial zinc, which paves the way for ZnO application in radiative environments.

Unusual Violet Photoluminescence in Indium-Doped ZnO Nanowires

Zinc Vacancy-Related Complex and Its Abnormal Photoluminescence in Zn+-implanted ZnO Single Crystals

Defect Luminescence and Its Mediated Physical Properties in ZnO

Vibronic Fine Structures on the ${\sim}3.0$ Ev Violet Emission in Ion-Implanted ZnO Nanorods

Ultraviolet Electroluminescence from In Doped n-ZnO Single-Nanowire/p~+-Si Heterostructures

Who Make Transparent ZnO Colorful? – Ion Implantation and Thermal Annealing Effects

Single photon emission from ZnO nanoparticles

Femtosecond Pulse Excited Two-Photon Photoluminescence and Second Harmonic Generation in Zno Nanowires

Probing Defects in ZnO by Persistent Phosphorescence

Cathodoluminescence and its mapping of flower-like ZnO, ZnO/ZnS core–shell and tube-like ZnS nanostructures

Green, Yellow, and Orange Defect Emission from Zno Nanostructures: Influence of Excitation Wavelength

Violet Luminescence In Phosphorus-Doped Zno Epitaxial Films

Nature of Red Luminescence Band in Research-Grade ZnO Single Crystals: A “Self-Activated” Configurational Transition

Origin of luminescence from ZnO/CdS core/shell nanowire arrays

Visible Luminescence Related to Defects in ZnO

Oxygen-vacancy and Depth-Dependent Violet Double-Peak Photoluminescence from Ultrathin Cuboid SnO2 Nanocrystals

Zinc Vacancy Related Emission in Homoepitaxial N-doped ZnO Microrods

Acceptor-related Emissions in Indium-Doped ZnO Nanorods

Evidences of VO, VZn, and Oi Defects As the Green Luminescence Origins in ZnO

First-Principles Study on the Luminescence Property of In-Doped Znte

Cavity-enhanced single photon emission from a single impurity-bound exciton