Violet Luminescence In Phosphorus-Doped Zno Epitaxial Films

a allenic,x q pan,yong che,z d hu,bin liu
DOI: https://doi.org/10.1063/1.2834696
IF: 4
2008-01-01
Applied Physics Letters
Abstract:A violet luminescence band at 3.1099 eV was observed at 12.5 K in phosphorus-doped ZnO epitaxial films deposited by O-2 plasma-assisted pulsed laser ablation. The band results from a transition between a shallow donor and a deep acceptor induced by phosphorus doping. The activation energy of the acceptor varies with the phosphorus concentration [P] and is 0.34 eV when [P] is 1.7x10(19) cm(-3). Under oxygen-rich conditions, the dominant acceptor in P2O5-doped ZnO may be the zinc vacancy, in agreement with recent first-principles calculations. (c) 2008 American Institute of Physics.
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