Abstract:ZnO has promising potential applications in optoelectronic industry, attributed to its direct wide band gap (3.37 eV) and high exciton binding energy (60 meV). Optoelectronic properties depend on a firm understanding of the physics of defects and impurities in ZnO. In this short review, we will discuss the progress in the defect and impurities emission of ZnO, and the extended properties determined by native defects as well as the remaining challenges. Experimental results illustrated that the green luminescence induced by V-O is peaked at 490 nm, while the typical emission around 503 nm correlates to DAP (donor-acceptor pair) recombination involving Cu+. As the isolated interstitial oxygen does not cause yellow emission, the interstitial zinc contributes to the 450 nm blue luminescence. For the V-Zn related luminescence, three peaks located at 414 nm, 525 nm and 600 nm can be expected, which originate from different charging state transition. Structured Cu-Zn emission around 500 nm is presented in ZnO particles with purity as high as 99.99%. Li impurity in ZnO has two emission peaks around 430 nm and 580 nm, caused by Li-i-Li-Zn and Li-Zn, respectively. N-O is a deep acceptor and contributes to the 730 nm red emission. The 550 nm luminescence in Al-doped ZnO can be ascribed to the Al-Zn-O-i complex. The blue emission and orange/red emission in C-doped ZnO originate from C and C based defect complex, respectively. The Si impurity affects the visible luminescence of ZnO is through tailoring native defects or formation of luminescent Zn2SiO4 phase. In contrast to the prevailing view that V-Zn induces the diluted ferromagnetism in ZnO, we illustrated that adsorption oxygen facilitates the d degrees magnetism in metal oxides system. The radiation tolerance of ZnO is found to be determined by the interstitial zinc, which paves the way for ZnO application in radiative environments.

Zinc Vacancy Related Emission in Homoepitaxial N-doped ZnO Microrods

The Luminescent Inhomogeneity and the Distribution of Zinc Vacancy-Related Acceptor-Like Defects in N-Doped ZnO Microrods

Engineering of Optical and Electrical Properties of ZnO by Non-Equilibrium Thermal Processing: the Role of Zinc Interstitials and Zinc Vacancies

Photoluminescence and Resonant Raman Scattering in N-doped ZnO Thin Films

Zinc Vacancy-Related Complex and Its Abnormal Photoluminescence in Zn+-implanted ZnO Single Crystals

Oxygen Vacancy Mediated Temperature Dependent Emission Behavior of Localized Bound Excitons in ZnO Nanorods

Acceptor Related Photoluminescence and Field Emission of Zno:P Nanostructures

Identification and Control of Native Defects in N-doped ZnO Microrods

Oxygen Vacancy: an Electron–Phonon Interaction Decoupler to Modulate the Near-Band-Edge Emission of ZnO Nanorods

Vacancies Inducing Electronic and Optical Properties in 2D ZnO:Be/Mg

Defect Luminescence and Its Mediated Physical Properties in ZnO

Spatial-resolved Cathode Luminescence Study of S-doped ZnO Particles for the Luminescence of UV, Green and Orange Band Emission

UV Spontaneous and Stimulated Emission of Nanostructure Zinc Oxide

Defects Control and Origins of Blue and Green Emissions in Sol-Gel ZnO Thin Films

Direct Evidences of Shallow Donor Level Enhanced Green Emission in Zno Quantum Dots

Who Make Transparent ZnO Colorful? – Ion Implantation and Thermal Annealing Effects

Defect-origin and stability of visible emission in ZnO Nanopillars

Unexpected Positive Role of Oxygen Vacancies in Na-doped ZnO

The Modulation of Optical Property and Its Correlation with Microstructures of ZnO Nanowires.

Dominant Free Exciton Emission in ZnO Nanorods

Room Temperature Ultraviolet Stimulated Emission of ZnO Nanocrystals