Abstract:Mg(x)Zn(1-x)O thin films were grown by the radio-frequency magnetron sputtering technique in Ar + N(2) and O(2) + N(2) ambient with different nitrogen partial pressure ratios on quartz substrates at 773 K. The correlations between the growth ambient and the resultant films properties were discussed. It is found that Mg concentration, structure and band gap of the MgZnO film can be tuned by increasing the nitrogen partial pressure ratio of the Ar + N(2) ambient, but cannot be tailored by changing the nitrogen partial pressure ratio of the O(2) + N(2) ambient. X-ray diffraction shows that the Mg(x)Zn(1-x)O films grown in the Ar + N(2) ambient consist of wurtzite phase at the nitrogen partial pressure ratios from 0% to 50%, a mixture of wurtzite and cubic phases at the ratios of 78-83%, and a cubic phase at 100%, whereas such structure transformation did not exist in the Mg(x)Zn(1-x)O film deposited in the O(2) + N(2) ambient by changing the nitrogen partial pressure ratio. The Mg concentration increases linearly with the increasing nitrogen partial pressure ratio of Ar + N(2), but does not vary with the increasing nitrogen partial pressure ratio of O(2) + N(2). The band gap increases linearly from 3.64 to 4.02 eV for the wurtzite Mg(x)Zn(1-x)O deposited in the Ar + N(2) ambient as nitrogen partial pressure ratio increases from 0% to 50%, but the band gap of the Mg(x)Zn(1-x)O film deposited in the O(2) + N(2) ambient keeps a constant of 3.63 eV with oxygen gas and reaches 6.30 eV abruptly in pure nitrogen ambient (without oxygen gas). The Mg(x)Zn(1-x)O films, which are grown in the Ar + N(2) and O(2) + N(2) ambient at nitrogen partial pressure ratio from 50% to 100% and 83% to 100%, respectively, show p-type conduction after annealing.

Growth Ambient Dependent Electrical Properties of Lithium and Nitrogen Dual-Doped Zno Films Prepared by Radio-Frequency Magnetron Sputtering

Roles of Hydrogen and Nitrogen in P-Type Doping of ZnO

Hydrogen‐assisted Nitrogen‐acceptor Doping in ZnO

Optical properties of p-type ZnO doped by lithium and nitrogen

Acceptor Formation Mechanisms Determination from Electrical and Optical Properties of P-Type ZnO Doped with Lithium and Nitrogen

Junction Properties of Nitrogen-Doped Zno Thin Films

Effects of Growth Ambient on Electrical Properties of Al–N Co-Doped P-Type ZnO Films

Effects of growth temperature on Li–N dual-doped p-type ZnO thin films prepared by pulsed laser deposition

Control of P- and N-Type Conductivities in Li-Doped Zno Thin Films

Improved P-Type Conductivity and Acceptor States in N-Doped Zno Thin Films

P-Type Conductivity and Stability of Nitrogen-Doped Zinc Oxide Prepared by Magnetron Sputtering

Dual-acceptor P-Type Behaviour in ZnO Films Grown by Plasma-Assisted Metalorganic Chemical Vapour Deposition

Low-resistivity, Stable P-Type ZnO Thin Films Realized Using a Li–N Dual-Acceptor Doping Method

Effect Of Growth Ambient On The Structure And Properties Of Mg(X)Zn(1-X)O Thin Films Prepared By Radio-Frequency Magnetron Sputtering

Fabrication of P-Type Li-Doped Zno Films by Pulsed Laser Deposition

P-Type Behavior of Nitrogen Doped, Lithium Doped, and Nitrogen-Lithium Codoped Zn0.11mg0.89o Thin Films

Hole Transport Properties of P-Type Polycrystalline ZnO Film Using a Dual-Acceptor Doping Method with Lithium and Nitrogen

Stability of P-type Conductivity in Nitrogen-Doped MgZnO Thin Film

Synthesis and Properties of P-Type Nitrogen-Doped ZnO Thin Films by Pulsed Laser Ablation of a Zn-rich Zn3N2 Target

Properties of N-doped ZnO thin films in annealing process

Preparation and Characterization of p-Type ZnO Using Li-N Dual-Acceptor Doping Method by Pulsed Laser Deposition