Abstract:The erratic p-type conductivity in nitrogen-doped ZnO film is still under investigation and has been debated up to now. In this study, the authors have studied the effect of rapid thermal process (RTP) on the properties of N-doped ZnO films grown by metal-organic chemical vapor deposition. Hall-effect measurements show that the sample is of p-type as the RTP temperature is lower than 350 °C while, as the RTP temperature increased up to 550 °C or higher, the conduction-type of the sample changed to be n-type. Correspondingly, obvious D and G peaks, which are related to graphite clusters, are observed to increase their intensity with RTP temperature, indicating that interstitial or substitutional carbon atoms may migrate to form carbon clusters in the grain boundary during RTP. RTP is also found to lead to significant changes on the photoluminescence of the samples, with enhanced visible emissions observed as RTP temperature increased. Similar changes are observed on the intensity ratios of the D over G peaks and the visible emission around 600 nm over the near-band-edge emission. This indicates that besides zinc vacancy (VZn) and oxygen vacancy (VO), which are popularly ascribed as the origins of the visible emissions around 500 and 550 nm, carbon clusters may be a possible origin of the visible emission around 600 nm. Finally, carbon clusters formed in the grain boundary are also supposed to at least partly be responsible for the type transition caused by RTP.

Influence Of Unintentional Doped Carbon On Growth And Properties Of N-Doped Zno Films

Synthetic and Effect of Annealing on the Luminescent Properties of Zno Nanowire

Surface Topography and Optical Properties of Al-doped ZnO Thin Films by Sol-gel Process

Effect of Annealing Temperature and CuO on Microstructure and Optical Band Gap of CuxZn1−xO Thin Films

Annealing Effects on the Microstructure and Photoluminescence Properties of Ni-Doped Zno Films

The Growth and Annealing of Single Crystalline Zno Films by Low-Pressure Mocvd

Effect of Annealing Temperature on the Optical and Electrical Properties of N Doped MgZnO Films

Effects of Annealing on the Ferromagnetism and Photoluminescence of Cu-Doped Zno Nanowires

Carbon Clusters in N-doped ZnO by Metal-Organic Chemical Vapor Deposition

Photoluminescence and Resonant Raman Scattering in N-doped ZnO Thin Films

Influence of Annealing on Microstructure and Photoluminescence Properties of Al-Doped ZnO Films

Influences of unintentionally doped carbon on magnetic properties in Mn–N co-doped ZnO

Effect of multiple-step annealing on the structural, optical and electrical properties of ZnO:In-N films

Effects of Rapid Thermal Annealing on Structural, Luminescent, and Electrical Properties of Al-Doped ZnO Films Grown by Atomic Layer Deposition

Properties of N-doped ZnO thin films in annealing process

Influence of Annealing on the Properties of Mn and N Co-Doped Zn0.88mn0.12o : N Films

Experimental and Theoretical Studies on the Influence of Unintentionally Doped Carbon on Magnetic Properties in ZnMnO:N

Induced Changes on Visible Emission and Conductive Type in N-doped ZnO Films by Rapid Thermal Process

Annealing Temperature Dependence of the Structures and Properties of Co-implanted ZnO Films

Annealing Effect on Properties of Zno Thin Films Grown on LiNbO3 Substrates by MOCVD

Effect of Post-Thermal Annealing on Properties of Zno Thin Film Grown on C-Al(2)O(3)By Metal-Organic Chemical Vapor Deposition