Abstract:Defects usually have an important role in tailoring various properties of two-dimensional (2D) materials. However, optical detection of defects, especially single-atom point defects, is very challenging in 2D layers. Here, we report our systematic studies on the Raman-activated defect vibrational modes in 2D semimetallic material by combining Raman spectroscopy, density functional theory (DFT) calculation and scanning tunneling microscopy (STM). We observed three common Raman-active vibrational modes located at 95 (A1g2\documentclass[12pt]{minimal}\usepackage{amsmath}\usepackage{wasysym}\usepackage{amsfonts}\usepackage{amssymb}\usepackage{amsbsy}\usepackage{mathrsfs}\usepackage{upgreek}\setlength{\oddsidemargin}{-69pt}\begin{document}$$A_{1g}^2$$\end{document}), 228 (A1g1\documentclass[12pt]{minimal}\usepackage{amsmath}\usepackage{wasysym}\usepackage{amsfonts}\usepackage{amssymb}\usepackage{amsbsy}\usepackage{mathrsfs}\usepackage{upgreek}\setlength{\oddsidemargin}{-69pt}\begin{document}$$A_{1g}^1$$\end{document}), and 304 cm−1 (B1g1\documentclass[12pt]{minimal}\usepackage{amsmath}\usepackage{wasysym}\usepackage{amsfonts}\usepackage{amssymb}\usepackage{amsbsy}\usepackage{mathrsfs}\usepackage{upgreek}\setlength{\oddsidemargin}{-69pt}\begin{document}$$B_{1g}^1$$\end{document}) in ZrSiTe few-layers, consistent with our theoretical calculations. Moreover, a pronounced mode sitting at 131.7 cm−1 was found in the ZrSiTe monolayer. This mode fades out quickly in the bilayer (2L) and eventually disappears in 4L. The high-resolution STM images and DFT calculations suggest this mode to be an intralayer shear mode at the Brillouin zone boundary which is activated by atomic point defects, and STM-based inelastic tunneling spectrum further confirms the existence of such a defect mode. The appearance of such ‘forbidden’ modes in Raman spectra may pave an avenue for the optical characterization of single-atom point defects in metallic 2D layers.

Raman-based Measurement of Carrier Concentration in N-Type ZnO Thin Films under Resonant Conditions

Raman Determination of Carrier Concentration in ZnO-based Heterostructure Light-Emitting Diodes.

Multiphonon Resonant Raman Scattering in N‐doped ZnO

Photoluminescence and Resonant Raman Scattering in N-doped ZnO Thin Films

Towards Accurate Predictions of Carrier Mobilities and Thermoelectric Performances in 2D Materials

Carrier Concentration Dependence of Band Gap Shift in N-Type Zno : Al Films

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Raman Spectroscopy as a Method for Structural Characterization of Zno-Based Systems at the Nanoscale

Raman and photoluminescence spectroscopy investigations of ZnO nanostructures

RAMAN SPECTROSCOPY STUDY ON LO PHONON-PLASMON COUPLED MODE IN GaN THIN FILMS

Correlation Between Carrier Recombination and P-Type Doping in P Monodoped and In–P Codoped ZnO Epilayers

Raman Spectroscopy of (mn, Co)-Codoped Zno Films

Carrier Concentration Dependence Of Acceptor Activation Energy In P-Type Zno

Raman study of N+-implanted ZnO

Raman-active Fröhlich Optical Phonon Mode in Arsenic Implanted ZnO

Carrier Type- and Concentration-Dependent Absorption and Photoluminescence of ZnO Films Doped with Different Na Contents

In-Situ Determination of the Flat Band Carrier Concentration and Surface Charge Density of Individual Semiconductor Nanowires by A Combination of Electrical and Field Emission Measurements

Exciton-phonon Coupling in Individual ZnTe Nanorods Studied by Resonant Raman Spectroscopy

The Carrier Transport Mechanism and Band Offset at the Interface of ZnO/n-Si(111) Heterojunction

Raman Probing of Competitive Laser Heating and Local Recrystallization Effect in ZnO Nanocrystals

Raman detection of hidden phonons assisted by atomic point defects in a two-dimensional semimetal