Abstract:Al-doped ZnO films were grown by reactive electron beam evaporation with ceramic targets,(ZnO)_(1-x)(Al_2O_3)_x(x=w(Al_2O_3)=0, 0.01,0.02,0.05),as source materials.The structural and electrical properties of Al-doped ZnO films were characterized by X-ray diffraction,Raman scattering and Hall investigations.The results showed that Al-doped ZnO films grown from(ZnO)_(1-x)(Al_2O_3)_x(x≤0.02) targets were still highly c-axis oriented,although the degree of c-axis orientation was somewhat degenerated along with further increase of Al content in the films.Raman scattering measurements indicated that the internal stress in Al-doped ZnO films increased along with the increase of Al content in the films and reached saturation in the case of x = 0.02.The actual atomic Al content in the films grown using(ZnO)_(0.98)(Al_2O_3)_(0.02) target was 6%,which was normalized with the Zn content in the film.The resistivity of Al-doped ZnO films first decreased with the increase of Al content in the film and reached a minimum of 7.85×10~(-4) Ω·cm at x=(0.02,) then increased with further increase of Al content in the film.The nature of the minimum resistivity of Al-doped ZnO films grown using(ZnO)_(0.98)(Al_2O_3)_(0.02) target was ascribed to the high electron density(1.32×10~(21) cm~(-3)) as well as its high electron mobility of 6.02 cm~2/(V·s).

Ti/Ni/Ti/Au Ohmic contact and Schottky transformation to Al-doped ZnO thin films

Electrical Characteristics of Ti/Al/Ti/Au Multilayer Ohmic Contacts to N-Type GaN

Ni/Au Ohmic Contacts to p-Type N-Doped ZnO

Rapid Thermal Annealing Induced Changes on the Contact of Ni/Au to N-doped ZnO

Low-resistivity Ni/Pt Ohmic contacts to p-type N-doped ZnO

Study of Ti/Au, Ti/Al/Au, and Ti/Al/Ni/Au ohmic contacts to n -GaN

Ohmic Contact and Interfacial Reaction of Ti/Al/Pt/Au Metallic Multi-Layers on N-Alxga1−xn/gan Heterostructures

Study of Ti/Au, Ti/Al/Au, a nd Ti/Al/Ni/Au ohmic co ntacts to n-GaN

Ohmic Contact Formation of Ti/Al/Ni/Au to N-Gan by Two-Step Annealing Method

Research on Ag/Au ohmic contact to n-ZnO

Ti/Al/Ni/Au and Ti/Al/Pt/Au Multi-Layer Ohmic Contacts on AlxGa1-xN/GaN Heterostructures

Microstructure and Electrical Properties of Al-doped ZnO Thin Films

Comparison of Ti/Au, Ni/Au, and Sc/Au ohmic contact metal stacks on (Al0.18Ga0.82)2O3

Annealing Effects on the Microstructure and Photoluminescence Properties of Ni-Doped Zno Films

Electrical, thermal, and microstructural characteristics of Ti/Al/Ti/Au multilayer Ohmic contacts to n-type GaN

Temperature Dependent Characteristics of Ti/Al/Ni/Au Ohmic Contact on Lattice-Matched In0.17Al0.83N/GaN Heterostructures

Formation Mechanisms of Low-Resistivity Ni∕Pt Ohmic Contacts to Li-Doped P-Type ZnO

Al/Ti Contacts To Sb-Doped P-Type Zno

Performance Comparison of Pt/Au and Ni/Au Schottky Contacts on Alxga1-X N/Gan Heterostructures at High Temperatures

Temperature Dependence of the Specific Resistance in Ti/Al/Ni/Au Ohmic Contacts on (nh4)2sx Treated N-Type GaN

ZnO P-N Homojunctions and Ohmic Contacts to Al–N-co-doped P-Type ZnO