Abstract:In this paper, Ni/Au/Ge/Ni/Au laminated metals were deposited on the n-(Al0.27Ga0.73)(0.5)In0.5P by electron beam evaporation, the ohmic contact with low contact resistance was successfully prepared by optimized annealing process. The specific contact resistance reached 1.4 x 10(-4) Omega.cm(2) when annealed at 445 degrees C for 600 s. The result of the secondary ion mass spectrometer shows that the solid-state reaction takes place at the interface between the laminated metal Ni/Au/Ge/Ni/Au and n-AlGaInP, then the germanium atoms and indium atoms diffuse outwards due to thermal decomposition and leave vacancies in the lattice. In this paper, the reason for the formation of ohmic contact is attributed to the fact that the germanium vacancy and indium vacancy are occupied by gallium atoms as donors to increasing the N-type doping concentration. The optimized annealing process can improve the ohmic contact performance of n-(Al0.27Ga0.73)(0.5)In0.5P with low doping concentration, but the specific contact resistivity has no obvious relationship with the annealing process when the of doping concentration of n-(Al0.27Ga0.73)(0.5)In0.5P increased. The Schottky barrier is high at low doping concentration of n-(Al0.27Ga0.73)(0.5)In0.5P. So inter diffusion in the annealing process could significantly increase the doping concentration of n-(Al0.27Ga0.73)(0.5)In0.5P and reduce the Schottky barrier height. Nevertheless, the Schottky barrier of the sample with high doping concentration is low enough what is not sensitive with inter diffusion. It provides a new method for the preparation of N-electrode of AlGaInP thin film light-emitting-diodes chip, as so as avoid the problem of n(+)-GaAs absorption in the conventional N-electrode preparation method and the problem of electrode dropping. However, there are still some shortcomings in this paper. The disadvantage is that the high doping concentration of n-AlGaInP will affect the crystal quality, which will reduce the luminous efficiency of LED. Therefore, in order to prepare ohmic contact with excellent properties on n-AlGaInP with lower doping concentration, optimizing the electrode design and the surface treatment of semiconductor materials are the keys to follow-up research.

Research on Ag/Au ohmic contact to n-ZnO

Ni/Au Ohmic Contacts to p-Type N-Doped ZnO

Surface Morphology, Electrochemical and Electrical Performances of ZnO Thin Films Sensitized with Ag Nanoparticles by UV Irradiation

Rapid Thermal Annealing Induced Changes on the Contact of Ni/Au to N-doped ZnO

Ti/Ni/Ti/Au Ohmic contact and Schottky transformation to Al-doped ZnO thin films

Study on annealing on Au/n-ZnO Schottky barriers characteristics

Ohmic Contact Mechanism of Ni/Au Contact to P-Type Gan Studied by Rutherford Backscattering Spectrometry

Effects of Ag on Electrical Properties of Ag/Ni/P-Gan Ohmic Contact

Research on P-Type GaN / Au Ohmic Contact

Low-resistivity Ni/Pt Ohmic contacts to p-type N-doped ZnO

The Study on the Reflectance and Resistance of Ni/Ag/Ti/Au Electrode Contact to p-GaN

NiO Removal of Ni/Au Ohmic Contact to P-Gan after Annealing

Study of Ti/Au, Ti/Al/Au, and Ti/Al/Ni/Au ohmic contacts to n -GaN

Temperature Dependent Diffusion and Epitaxial Behavior of Oxidized Au/Ni/P-Gan Ohmic Contact

Enhanced Photocurrent and Photocatalytic Properties of Porous ZnO Thin Film by Ag Nanoparticles

Study on the effect of thermal annealing process on ohmic contact performance of AuGeNi/n-AlGaInP

Investigation on the formation mechanism and diffusion of the electrode metal of oxidized Au/Ni/p-GaN ohmic contact in different alloying time

ZnO P-N Homojunctions and Ohmic Contacts to Al–N-co-doped P-Type ZnO

Microstructure Evolution of Oxidized Ni/Au Ohmic Contacts to P-Gan Studied by X-Ray Diffraction

Effects of Oxide-Modified Spherical ZnO on Electrical Properties of Ag/ZnO Electrical Contact Material

Study of Ti/Au, Ti/Al/Au, a nd Ti/Al/Ni/Au ohmic co ntacts to n-GaN