Abstract:Current–voltage (I–V) characteristics, contact resistance, and optical transmittance measurements are performed to investigate the effects of different annealing ambient conditions on properties of contacts of Ni/Au/p-GaN. With increasing annealing temperature in the range from room temperature to 600°C in air, I–V characteristics become linear, and the specific contact resistance (ρc) reduces continually. ρc of Ni (20 nm)/Au (50 nm) contact to p-GaN annealed in air at 600°C is obtained as 2.76×10−2 Ω cm2. However, in N2 ambient, ρc is higher and shows a more complex evolution with increasing annealing temperature. The optical transmittance of the specimens increases and maintains a high value with the annealing temperature in air while it increases first, and then decreases monotonically in N2 atmosphere. We suggest that formation of low-resistance and high optical transmittance p-type Ohmic contact may be attributed to the oxidized Ni layer. The mechanism of Ohmic contact formation under different ambient conditions is also discussed.

Research on P-Type GaN / Au Ohmic Contact

Electrical Characteristics of Ti/Al/Ti/Au Multilayer Ohmic Contacts to N-Type GaN

Effects of Surface Treatment on Non-alloyed Ti/Al Ohmic Contact of n-GaN

Ohmic Contact Mechanism of Ni/Au Contact to P-Type Gan Studied by Rutherford Backscattering Spectrometry

Oxidation Treatment on Ni/Au Ohmic Contacts to P‐type GaN

Au/Ni/Au as a contact for p-Type GaAs

Metal/n-AlGaN Ohmic Contact

Ni/Ag/Pt Ohmic Contacts to P-type GaN

Thermal Annealing Effects on Ni/Au Contacts to P Type Gan in Different Ambient

Study of Ti/Au, Ti/Al/Au, and Ti/Al/Ni/Au ohmic contacts to n -GaN

Very-low-specific-resistance Pd/Ag/Au/Ti/Au alloyed ohmic contact to p GaN for high-current devices

Ohmic Contact with a Contact Resistivity of 12 Ω ⋅ Mm on P-Gan/algan/gan

A Novel Ni/Ag/Pt Ohmic Contact to P-Type GaN for Flip-Chip Light-Emitting Diodes

Study of Ti/Au, Ti/Al/Au, a nd Ti/Al/Ni/Au ohmic co ntacts to n-GaN

Ti/Al/Pt/Au and Al Ohmic Contacts on Si-Substrated Gan

Investigation on the formation mechanism and diffusion of the electrode metal of oxidized Au/Ni/p-GaN ohmic contact in different alloying time

Structural Characterization of V/Al/V/Au Ohmic Contacts to N-Type Al0.4ga0.6n

Performance Comparison of Pt/Au and Ni/Au Schottky Contacts on Alxga1-X N/Gan Heterostructures at High Temperatures

Ohmic Contacts in GaN-based Devices

Temperature Dependence of the Specific Resistance in Ti/Al/Ni/Au Ohmic Contacts on (nh4)2sx Treated N-Type GaN

Reversible Effect of the Thermal Processing of Ni/Au Ohmic Contact to P-Gan