Structural Characterization of V/Al/V/Au Ohmic Contacts to N-Type Al0.4ga0.6n

Li Tao,Qin Zhi-Xin,Xu Zheng-Yu,Shen Bo,Zhang Guo-Yi
DOI: https://doi.org/10.1088/1674-1056/20/4/046101
2011-01-01
Chinese Physics B
Abstract:This paper investigates the temperature dependence of the specific resistance in annealed V/Al/V/Au (15 nm/85 nm/20 nm/95 nm) contacts on n-Al0.4Ga0.6N. Contacts annealed at 700 degrees C and higher temperatures show Ohmic behaviour. Annealing at 800 degrees C produces the lowest contact resistance. Samples annealed at 800 degrees C have been analysed by using cross-sectional transmission electron microscopy and an energy dispersive x-ray spectrum. Limited reaction depths are observed between V-based contacts and n-AlGaN. The VN grains are found to form in the contact layer of the annealed samples, which can be considered as the key to the successful formation of Ohmic contact. The contact layer adjacent to AlGaN material consists of V-Al-Au-N, AlN and AlAu alloys.
What problem does this paper attempt to address?