Abstract:In this paper, Ni/Au/Ge/Ni/Au laminated metals were deposited on the n-(Al0.27Ga0.73)(0.5)In0.5P by electron beam evaporation, the ohmic contact with low contact resistance was successfully prepared by optimized annealing process. The specific contact resistance reached 1.4 x 10(-4) Omega.cm(2) when annealed at 445 degrees C for 600 s. The result of the secondary ion mass spectrometer shows that the solid-state reaction takes place at the interface between the laminated metal Ni/Au/Ge/Ni/Au and n-AlGaInP, then the germanium atoms and indium atoms diffuse outwards due to thermal decomposition and leave vacancies in the lattice. In this paper, the reason for the formation of ohmic contact is attributed to the fact that the germanium vacancy and indium vacancy are occupied by gallium atoms as donors to increasing the N-type doping concentration. The optimized annealing process can improve the ohmic contact performance of n-(Al0.27Ga0.73)(0.5)In0.5P with low doping concentration, but the specific contact resistivity has no obvious relationship with the annealing process when the of doping concentration of n-(Al0.27Ga0.73)(0.5)In0.5P increased. The Schottky barrier is high at low doping concentration of n-(Al0.27Ga0.73)(0.5)In0.5P. So inter diffusion in the annealing process could significantly increase the doping concentration of n-(Al0.27Ga0.73)(0.5)In0.5P and reduce the Schottky barrier height. Nevertheless, the Schottky barrier of the sample with high doping concentration is low enough what is not sensitive with inter diffusion. It provides a new method for the preparation of N-electrode of AlGaInP thin film light-emitting-diodes chip, as so as avoid the problem of n(+)-GaAs absorption in the conventional N-electrode preparation method and the problem of electrode dropping. However, there are still some shortcomings in this paper. The disadvantage is that the high doping concentration of n-AlGaInP will affect the crystal quality, which will reduce the luminous efficiency of LED. Therefore, in order to prepare ohmic contact with excellent properties on n-AlGaInP with lower doping concentration, optimizing the electrode design and the surface treatment of semiconductor materials are the keys to follow-up research.

Reversible Effect of the Thermal Processing of Ni/Au Ohmic Contact to P-Gan

Electrical Characteristics of Ti/Al/Ti/Au Multilayer Ohmic Contacts to N-Type GaN

Thermal Annealing Effects on Ni/Au Contacts to P Type Gan in Different Ambient

Performance Comparison of Pt/Au and Ni/Au Schottky Contacts on Alxga1-X N/Gan Heterostructures at High Temperatures

Effects of Surface Treatment on Non-alloyed Ti/Al Ohmic Contact of n-GaN

Oxidation Treatment on Ni/Au Ohmic Contacts to P‐type GaN

Ohmic Contact Mechanism of Ni/Au Contact to P-Type Gan Studied by Rutherford Backscattering Spectrometry

Microstructure Evolution of Oxidized Ni/Au Ohmic Contacts to P-Gan Studied by X-Ray Diffraction

NiO Removal of Ni/Au Ohmic Contact to P-Gan after Annealing

Study of Ti/Au, Ti/Al/Au, and Ti/Al/Ni/Au ohmic contacts to n -GaN

Effect of Annealing Temperature on Ti/Al/Ni/Au Ohmic Contacts on Undoped AlN Films

Ohmic Contact Formation of Ti/Al/Ni/Au to N-Gan by Two-Step Annealing Method

The Significant Effect of the Thickness of Ni Film on the Performance of the Ni/Au Ohmic Contact to P-Gan

Rapid Thermal Annealing Induced Changes on the Contact of Ni/Au to N-doped ZnO

Effects of Oxidation by O2 Plasma on Formation of Ni∕Au Ohmic Contact to P-Gan

Temperature Dependent Diffusion and Epitaxial Behavior of Oxidized Au/Ni/P-Gan Ohmic Contact

Effects of Ag on Electrical Properties of Ag/Ni/P-Gan Ohmic Contact

Research on P-Type GaN / Au Ohmic Contact

Study of Ti/Au, Ti/Al/Au, a nd Ti/Al/Ni/Au ohmic co ntacts to n-GaN

Study on the effect of thermal annealing process on ohmic contact performance of AuGeNi/n-AlGaInP

Highly Reflective Ni/Ag/Pt/Au Ohmic Contacts To P-Gan With Ito Interlayer