Abstract:Beta gallium oxide ($\beta$-Ga$_2$O$_3$) shows significant promise in the high-temperature, high-power, and sensing electronics applications. However, long-term stable metallization layers for Ohmic contacts at high temperature present unique thermodynamic challenges. The current most common Ohmic contact design based on 20 nm of Ti has been repeatedly demonstrated to fail at even moderately elevated temperatures (300-400$^{\circ}$C) due to a combination of non-stoichiometric Ti/Ga$_2$O$_3$ interfacial reactions and kinetically favored Ti diffusion processes. Here we demonstrate stable Ohmic contacts for Ga$_2$O$_3$ devices operating up to 500-600$^{\circ}$C using ultrathin Ti layers with a self-limiting interfacial reaction. The ultrathin Ti layer in the 5nm Ti / 100nm Au contact stack is designed to fully oxidize while forming an Ohmic contact, thereby limiting both thermodynamic and kinetic instability. This novel contact design strategy results in an epitaxial conductive anatase titanium oxide interface layer that enables low-resistance Ohmic contacts that are stable both under long-term continuous operation (>500 hours) at 600$^{\circ}$C in vacuum ($\leq$ 10$^{-4}$ Torr), as well as after repeated thermal cycling (15 times) between room temperature and 550$^{\circ}$C in flowing N$_2$. This stable Ohmic contact design will accelerate the development of high-temperature devices by enabling research focus to shift towards rectifying contacts and other interfacial layers.

Mechanism Study of Low-Resistance Ohmic Contact in Cr/Au Electrodes on (100) Β-Ga2o3 Substrate with Rapid Thermal Annealing

Electrical Characteristics of Ti/Al/Ti/Au Multilayer Ohmic Contacts to N-Type GaN

Investigation of the Mechanism for Ohmic Contact Formation in Ti/Al/Ni/Au Contacts to Β-Ga2o3 Nanobelt Field-Effect Transistors.

Low resistance Ohmic contact of multi-metallic Mo/Al/Au stack with ultra-wide bandgap Ga 2 O 3 thin film with post-annealing and its in-depth interface studies for next-generation high-power devices

Ohmic Contact Mechanism of Ni/Au Contact to P-Type Gan Studied by Rutherford Backscattering Spectrometry

Ultrathin Stable Ohmic Contacts for High-Temperature Operation of $β$-Ga$_2$O$_3$ Devices

Very-Low Resistance Contact to 2D Electron Gas by Annealing Induced Penetration Without Spikes Using TaAl/Au on Non-Recessed I-Algan/gan

Quasi-two-dimensional β-Ga2O3 field effect transistors with large drain current density and low contact resistance via controlled formation of interfacial oxygen vacancies

Ohmic Contact Formation of Ti/Al/Ni/Au to N-Gan by Two-Step Annealing Method

Performance Comparison of Pt/Au and Ni/Au Schottky Contacts on Alxga1-X N/Gan Heterostructures at High Temperatures

Temperature Dependent Diffusion and Epitaxial Behavior of Oxidized Au/Ni/P-Gan Ohmic Contact

Mechanism of Ti/Al/Ti/W Au-free ohmic contacts to AlGaN/GaN heterostructures via pre-ohmic recess etching and low temperature annealing

Process and characterization of ohmic contacts for beta-phase gallium oxide

Microstructure Evolution of Oxidized Ni/Au Ohmic Contacts to P-Gan Studied by X-Ray Diffraction

Ohmic Contact with a Contact Resistivity of 12 Ω ⋅ Mm on P-Gan/algan/gan

Recent Progress in Source/Drain Ohmic Contact with Β-Ga2o3

Investigation on the formation mechanism and diffusion of the electrode metal of oxidized Au/Ni/p-GaN ohmic contact in different alloying time

Research on P-Type GaN / Au Ohmic Contact

Investigation of MBE grown high Al concentration AlGaN ohmic contact

Very-low-specific-resistance Pd/Ag/Au/Ti/Au alloyed ohmic contact to p GaN for high-current devices

Recent Advances in Β-Ga2o3–metal Contacts