Abstract:Power electronics are becoming increasingly more important, as electrical energy constitutes 40% of the total primary energy usage in the USA and is expected to grow rapidly with the emergence of electric vehicles, renewable energy generation, and energy storage. New materials that are better suited for high-power applications are needed as the Si material limit is reached. Beta-phase gallium oxide (β-Ga2O3) is a promising ultra-wide-bandgap (UWBG) semiconductor for high-power and RF electronics due to its bandgap of 4.9 eV, large theoretical breakdown electric field of 8 MV cm-1, and Baliga figure of merit of 3300, 3-10 times larger than that of SiC and GaN. Moreover, β-Ga2O3 is the only WBG material that can be grown from melt, making large, high-quality, dopable substrates at low costs feasible. Significant efforts in the high-quality epitaxial growth of β-Ga2O3 and β-(AlxGa1-x)2O3 heterostructures has led to high-performance devices for high-power and RF applications. In this report, we provide a comprehensive summary of the progress in β-Ga2O3 field-effect transistors (FETs) including a variety of transistor designs, channel materials, ohmic contact formations and improvements, gate dielectrics, and fabrication processes. Additionally, novel structures proposed through simulations and not yet realized in β-Ga2O3 are presented. Main issues such as defect characterization methods and relevant material preparation, thermal studies and management, and the lack of p-type doping with investigated alternatives are also discussed. Finally, major strategies and outlooks for commercial use will be outlined.

Recent Advances in Β-Ga2o3–metal Contacts

Recent Progress in Source/Drain Ohmic Contact with Β-Ga2o3

Progress of power field effect transistor based on ultra-wide bandgap Ga2O3 semiconductor material

Low resistance Ohmic contact of multi-metallic Mo/Al/Au stack with ultra-wide bandgap Ga 2 O 3 thin film with post-annealing and its in-depth interface studies for next-generation high-power devices

Progress of Ultra-Wide Bandgap Ga2O3 Semiconductor Materials in Power MOSFETs

A review of the most recent progresses of state-of-art gallium oxide power devices

Quasi-two-dimensional β-Ga2O3 field effect transistors with large drain current density and low contact resistance via controlled formation of interfacial oxygen vacancies

Effective Suppression of MIS Interface Defects Using Boron Nitride Toward High-Performance Ta-Doped-β-Ga2O3 MISFETs.

Process and characterization of ohmic contacts for beta-phase gallium oxide

Recent Advanced Ultra‐Wide Bandgap β‐Ga2O3 Material and Device Technologies

β-Ga2O3-Based Heterostructures and Heterojunctions for Power Electronics: A Review of the Recent Advances

Progress in Gallium Oxide Field-Effect Transistors for High-Power and RF Applications

β-Ga2O3-Based Power Devices: A Concise Review

First-Principles-Based Quantum Transport Simulations of High- Performance and Low-Power MOSFETs Based on Monolayer Ga2O3

Electrical contacts in monolayer Ga2O3 field-effect tansistors

Vertical Β-Ga2o3 Power Transistors: Fundamentals, Designs, and Opportunities

Review of gallium oxide based field-effect transistors and Schottky barrier diodes

Investigation of the Mechanism for Ohmic Contact Formation in Ti/Al/Ni/Au Contacts to Β-Ga2o3 Nanobelt Field-Effect Transistors.

Enhancing the Mechanical Strength Ofβ-Ga2o3 with Al Alloying

Extremely Low Thermal Resistance of β-Ga 2 O 3 MOSFETs by Co-integrated Design of Substrate Engineering and Device Packaging

Trench Gate β-Ga2O3 MOSFETs: A Review