High-temperature Annealing Effects on Epitaxial TiN Films on 4H-Sic

Hsueh- Chen,Ching-Ho Chen,Yi Chou,Jhih-Syuan Chen,Yu-Fu Hsu,Chih-Wei Kuo,Cheng-Jung Ko,Li Chang,Chun-Hua Chen
DOI: https://doi.org/10.1016/j.surfcoat.2024.130708
IF: 4.865
2024-01-01
Surface and Coatings Technology
Abstract:To gain deeper insights into the impact of very high-temperature annealing on TiN film quality and thermal diffusion phenomena, the deposited TiN films underwent annealing in an induction heating furnace across a temperature range from 1150 degrees C to 1700 degrees C. Our findings indicate that TiN films remain stable, and the fullwidth at half-maximum (FWHM) of TiN (111) noticeably reduced by about 30 % when annealed at 1250 degrees C. However, as the annealing temperature rises to 1400 degrees C, the film composition gradually enriches with carbon as TiC x N 1- x with x up to 0.5. After annealing at 1700 degrees C, the film is further enriched with x larger than 0.5. For a long time annealing at 1700 degrees C, the decomposition of SiC substrate with void formation is verified from observations by cross-sectional transmission electron microscopy.
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