Abstract:Carbon nanotubes (CNT) are known to be materials with potential for manufacturing sub-20 nm high aspect ratio vertical interconnects in future microchips. In order to be successful with respect to contending against established tungsten or copper based interconnects, though, CNT must fulfil their promise of also providing low electrical resistance in integrated structures using scalable integration processes fully compatible with silicon technology. Hence, carefully engineered growth and integration solutions are required before we can fully exploit their potentialities. This work tackles the problem of optimizing a CNT integration process from the electrical perspective. The technique of measuring the CNT resistance as a function of the CNT length is here extended to CNT integrated in vertical contacts. This allows extracting the linear resistivity and the contact resistance of the CNT, two parameters to our knowledge never reported separately for vertical CNT contacts and which are of utmost importance, as they respectively measure the quality of the CNT and that of their metal contacts. The technique proposed allows electrically distinguishing the impact of each processing step individually on the CNT resistivity and the CNT contact resistance. Hence it constitutes a powerful technique for optimizing the process and developing CNT contacts of superior quality. This can be of relevant technological importance not only for interconnects but also for all those applications that rely on the electrical properties of CNT grown with a catalytic chemical vapor deposition method at low temperature.

Annealing Nano-to-micro Contacts for Improved Contact Resistance

Improving contact of CNT - metal by annealing

Characterization of the Resistance and Force of a Carbon Nanotube/Metal Side Contact by Nanomanipulation

Measuring the electrical resistivity and contact resistance of vertical carbon nanotube bundles for application as interconnects

The Effect of Low-Temperature Annealing on the Electrical Characteristics of Carbon Nanotube Network Field-Effect Transistors

End-bonded contacts for carbon nanotube transistors with low, size-independent resistance

Annealing Temperature Optimization for High-Performance Carbon Nanotube Thin Film Transistors

Low-Resistance Carbon Nanotube Contact Plug to Silicon

Nanoscale metal-InGaAs contacts with ultra-low specific contact resistivity: Improved interfacial quality and extraction methodology

A nano-indentation study of the contact resistance and resistivity of a bi-layered Au/multi-walled carbon nanotube composite

Effect of graphite related interfacial microstructure created by high temperature annealing on the contact properties of Ni/Ti/6H-SiC

Establishing Ohmic Contact of a Radial Compressed CNT Bundle with High Work Function Metal

Fabrication of Ohmic Contact on the Carbon-Terminated Surface of N-Type Silicon Carbide

Self‐Aligned Contact Doping for Performance Enhancement of Low‐Leakage Carbon Nanotube Field Effect Transistors

Enhancing Thermal Conductive Performance of Vertically Aligned Carbon Nanotube Array Composite by Pre-Annealing Treatment.

Graphenic Carbon-Silicon Contacts for Reliability Improvement of Metal-Silicon Junctions

A method to improve the specific contact resistance of 4H-SiC Ohmic contact through increasing the ratio of sp 2 -carbon

Effects of Current Annealing on Thermal Conductivity of Carbon Nanotubes

Soft-lock drawing of super-aligned carbon nanotube bundles for nanometre electrical contacts

Improvement of Interface and Electrical Properties in Carbon Nanotube/nanocrystalline Copper Composite Films

Investigating Interfacial Contact Configuration and Behavior of Single-Walled Carbon Nanotube-Based Nanodevice with Atomistic Simulations