Abstract:Carbon nanotube field-effect transistors (CNT FETs) have been demonstrated to exhibit high performance only through low-temperature fabrication process and require a low thermal budget to construct monolithic three-dimensional (M3D) integrated circuits (ICs), which have been considered a promising technology to meet the demands of high-bandwidth computing and fully functional integration. However, the lack of high-quality CNT materials at the upper layer and a low-parasitic interlayer dielectric (ILD) makes the reported M3D CNT FETs and ICs unable to provide the predicted high performance. In this work, we demonstrate a multilayer stackable process for M3D integration of high-performance aligned carbon nanotube (A-CNT) transistors and ICs. A low-kappa (similar to 3) interlayer SiO2 layer is prepared from spin-on-glass (SOG) through processes with a highest temperature of 220 C-degrees, presenting low parasitic capacitance between two transistor layers and excellent planarization to offer an ideal surface for the A-CNT and device fabrication process. A high-quality A-CNT film with a carrier mobility of 650 cm(2) V-1 s(-1) is prepared on the ILD layer through a clean transfer process, enabling the upper CNT FETs fabricated with a low-temperature process to exhibit high on-state current (1 mA mu m(-1)) and peak transconductance (0.98 mS mu m(-1)). The bottom A-CNT FETs maintain pristine high performance after undergoing the ILD growth and upper FET fabrication. As a result, 5-stage ring oscillators utilizing the M3D architecture show a gate propagation delay of 17 ps and an active region of approximately 100 mu m(2), representing the fastest and the most compact M3D ICs to date.

Low-Resistance Carbon Nanotube Contact Plug to Silicon

Interface States in Gate Stack of Carbon Nanotube Array Transistors.

Monolithic Three‐dimensional Integration of Aligned Carbon Nanotube Transistors for High‐performance Integrated Circuits

High-Frequency Analysis of Cu-Carbon Nanotube Composite Through-Silicon Vias

Reliability Evaluation of Carbon Nanotube Interconnect in a Silicon CMOS Environment

Hf-Contacted High-Performance Air-Stable N-Type Carbon Nanotube Transistors

Compliant Carbon Nanotube-Metal Contact Structures

Establishing Ohmic Contact of a Radial Compressed CNT Bundle with High Work Function Metal

Measuring the electrical resistivity and contact resistance of vertical carbon nanotube bundles for application as interconnects

Horizontally aligned carbon nanotube bundles for interconnect application: diameter-dependent contact resistance and mean free path

High-Performance Carbon Nanotube Complementary Logic with End-Bonded Contacts

Device and Circuit-Level Performance of Carbon Nanotube Field-Effect Transistor with Benchmarking Against A Nano-Mosfet

Carbon Nanotube Complementary Logic with Low-Temperature Processed End-Bonded Metal Contacts

Characterization of the Resistance and Force of a Carbon Nanotube/Metal Side Contact by Nanomanipulation

Self‐Aligned Contact Doping for Performance Enhancement of Low‐Leakage Carbon Nanotube Field Effect Transistors

Novel Local Silicon-Gate Carbon Nanotube Transistors Combining Silicon-on-Insulator Technology for Integration

Contact Engineering and Channel Doping for Robust Carbon Nanotube NFETs

Annealing Nano-to-micro Contacts for Improved Contact Resistance

Graphenic Carbon-Silicon Contacts for Reliability Improvement of Metal-Silicon Junctions

Investigating Interfacial Contact Configuration and Behavior of Single-Walled Carbon Nanotube-Based Nanodevice with Atomistic Simulations

Local Silicon-Gate Carbon Nanotube Field Effect Transistors Using Silicon-On-Insulator Technology