Improvement of Interface and Electrical Properties in Carbon Nanotube/nanocrystalline Copper Composite Films

Gengjie Wang,Chao Sun,Yunpeng Cai,Yujie Ma,Junaid Ali Syed,Haichao Wang,Zhenhua Cao,Xiangkang Meng
DOI: https://doi.org/10.1016/j.matchemphys.2018.11.025
IF: 4.778
2019-01-01
Materials Chemistry and Physics
Abstract:In this work, we have systematically studied the effect of interfacial microstructure and annealing on electrical properties of the carbon nanotubes (CNT)/Cu composite films. The stability and low resistivity of CNT/Cu films is better than that of pure Cu films. The CNT/Cu films reached to lowest resistivity of 6 mu Omega cm after annealed at 600 degrees C, and keeps low resistivity after annealed at 700 degrees C. This is mainly due to two kinds of interface structure formed between CNTs and Cu. The first kind is (111) planes of Cu parallel to (002) planes of the CNT, the other type is a covetic interface structure formed by C atoms diffusing into Cu grains. These epitaxial interfaces reduce the contact resistance and promote the formation of a local ballistic conductor between CNTs and Cu with low electron scattering, resulting in a reduced electrical resistivity.
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