Abstract:In this work, the reliability of BTI in top‐gate CNT FETs under a wide range of temperatures is investigated firstly. The CNT devices not only exhibit a high on/off current ratio (Ion/Ioff, ≈105) and a low subthreshold swing (SS) ranging from 200 to 400 K, but also the threshold voltage (Vth) shifts caused by BTI become 2–3 times smaller than previous works. In addition, by optimizing the device fabrication process, the CNT FET presents the Normalized BTI shift down to ≈0.10 V/(MV cm−1), which is by far the most reliable top‐gate nanodevices. Carbon nanotube (CNT) is widely regarded as a promising candidate for constructing sub‐10 nm field‐effect transistors (FETs). However, limited attention is carried out on the reliability of CNT FETs, which is critical for practical application. In this work, the bias temperature instability (BTI) effect in top‐gate CNT FETs is thoroughly investigated under a wide range of environment temperatures from 200 to 400 K for the first time. Notably, the threshold voltage (Vth) shifts induced by BTI are measured down to 0.38 V, which is ≈2–3 times smaller than those reported in previous studies. In addition, by optimizing the device fabrication process, the reliability of the BTI effects in CNT FETs can be further improved. The optimized CNT FET exhibits a Normalized BTI shift down to ≈0.10 V/(MV cm−1), which represents the most reliable top‐gate nano‐devices to date.

Annealing Temperature Optimization for High-Performance Carbon Nanotube Thin Film Transistors

Rapid Thermal Annealing for Carbon Nanotube Thin Film Transistors by a Double-Themral-region Furnace

Investigation on self-heating effect in carbon nanotube field-effect transistors

Electrothermal Characterization of Carbon Nanotube Field Effect Transistors (Cntfets)

Improving the Performance of Aligned Carbon Nanotube-Based Transistors by Refreshing the Substrate Surface.

The Effect of Low-Temperature Annealing on the Electrical Characteristics of Carbon Nanotube Network Field-Effect Transistors

Influence of Annealing Temperatures on Solution-Processed Alinzno Thin Film Transistors

Effects of Annealing Process on Characteristics of Fully Transparent Zinc Tin Oxide Thin-Film Transistor

Influence of Post-Annealing on Electrical Characteristics of Thin-Film Transistors with Atomic-Layer-Deposited Zno-Channel/Al2o3-Dielectric

Effect of Annealing Temperature on Electrical Properties of ZTO Thin-Film Transistors

Optimization of CNT and TFT Parameters for Maximum Transconductance and Safe Temperature Operation of Carbon Nanotube Thin-Film Transistors (CNT-TFTs) Employed in Flat Panel Displays

A Carbon Nanotube Electrode A-Igzo-Tft

ANNEALING TEMPERATURE EFFECT ON THE FIELD EMISSION PROPERTIES OF CARBON NANOTUBE FILMS

Performance Improvement of Atomic Layer-Deposited ZnO/Al2O3Thin-Film Transistors by Low-Temperature Annealing in Air

High-Performance Carbon-Nanotube-Based Complementary Field-Effect-Transistors And Integrated Circuits With Yttrium Oxide

Investigation and Improvement of the Bias Temperature Instability in Carbon Nanotube Transistors

Tuning Threshold Voltage of Carbon Nanotube Thin Film Transistors by Channel Length Engineering

Performance Enhancement Of Carbon Nanotube Thin Film Transistor By Yttrium Oxide Capping

Evolution of Electrical Performance of Zno-Based Thin-Film Transistors by Low Temperature Annealing

Enhancement of Two-Step Low-Temperature Annealing Treatment on Electrical Performance of In-Sn-O Thin-Film Transistors

Enhanced Thermal Stability of Elevated-Metal Metal-Oxide Thin-Film Transistors via Low-Temperature Nitrogen Post-Annealing