Abstract:Carbon nanotube field-effect transistors (CNT FETs) have been demonstrated to exhibit high performance only through low-temperature fabrication process and require a low thermal budget to construct monolithic three-dimensional (M3D) integrated circuits (ICs), which have been considered a promising technology to meet the demands of high-bandwidth computing and fully functional integration. However, the lack of high-quality CNT materials at the upper layer and a low-parasitic interlayer dielectric (ILD) makes the reported M3D CNT FETs and ICs unable to provide the predicted high performance. In this work, we demonstrate a multilayer stackable process for M3D integration of high-performance aligned carbon nanotube (A-CNT) transistors and ICs. A low-kappa (similar to 3) interlayer SiO2 layer is prepared from spin-on-glass (SOG) through processes with a highest temperature of 220 C-degrees, presenting low parasitic capacitance between two transistor layers and excellent planarization to offer an ideal surface for the A-CNT and device fabrication process. A high-quality A-CNT film with a carrier mobility of 650 cm(2) V-1 s(-1) is prepared on the ILD layer through a clean transfer process, enabling the upper CNT FETs fabricated with a low-temperature process to exhibit high on-state current (1 mA mu m(-1)) and peak transconductance (0.98 mS mu m(-1)). The bottom A-CNT FETs maintain pristine high performance after undergoing the ILD growth and upper FET fabrication. As a result, 5-stage ring oscillators utilizing the M3D architecture show a gate propagation delay of 17 ps and an active region of approximately 100 mu m(2), representing the fastest and the most compact M3D ICs to date.

Optimization of CNT and TFT Parameters for Maximum Transconductance and Safe Temperature Operation of Carbon Nanotube Thin-Film Transistors (CNT-TFTs) Employed in Flat Panel Displays

Electrothermal Characterization of Carbon Nanotube Field Effect Transistors (Cntfets)

Carbon Nanotube Thin Film Transistors for Flat Panel Display Application

Monolithic Three‐dimensional Integration of Aligned Carbon Nanotube Transistors for High‐performance Integrated Circuits

A novel thin-film transistor using carbon nanotubes as both channel and electrodes

Exploring the Performance Limit of Carbon Nanotube Network Film Field‐Effect Transistors for Digital Integrated Circuit Applications

Performance Enhancement Of Carbon Nanotube Thin Film Transistor By Yttrium Oxide Capping

Fully transparent solution-processed carbon nanotube thin film transistors on a flexible substrate

(Invited) Carbon Nanotube Transistors for Flat Panel Display Application

Annealing Temperature Optimization for High-Performance Carbon Nanotube Thin Film Transistors

High Performance Semiconducting Enriched Carbon Nanotube Thin Film Transistors Using Metallic Carbon Nanotube Electrode

35‐4: Carbon Nanotube Thin‐Film Transistors for Active‐Matrix Micro‐LED Display – Device Performances, Bias Stress Stability and Compact Modeling

Low-voltage High-Performance Flexible Digital and Analog Circuits Based on Ultrahigh-Purity Semiconducting Carbon Nanotubes

Room-temperature Printing of CNTs-based Flexible TFTs with High Performance

Thin Film FETs: Exploring the Performance Limit of Carbon Nanotube Network Film Field‐Effect Transistors for Digital Integrated Circuit Applications (adv. Funct. Mater. 16/2019)

High-Performance Carbon Nanotube Thin-Film Transistor Technology

Semiconducting carbon nanotube network thin-film transistors with enhanced inkjet-printed source and drain contact interfaces

Device and Circuit-Level Performance of Carbon Nanotube Field-Effect Transistor with Benchmarking Against A Nano-Mosfet

Tuning Threshold Voltage of Carbon Nanotube Thin Film Transistors by Channel Length Engineering

Carbon Nanotube Displays

Integration and Characterization of Transparent Thin Film Transistors with Carbon Nanotubes As Aligned Channel and Electrodes