Abstract:Nickel silicide has many advantages, such as low resistivity and low formation temperature; therefore, it has been widely used in the fields of solar cells, transistors and complementary metal-oxidesemiconductor (CMOS) devices. To obtain high-quality nickel-silicide thin film, solid-state reaction is a convenient and efficient fabrication method. For better understanding of the dynamic formation mechanism, we used in-situ transmission electron microscopy (TEM) to record the diffusion behavior during the heating process. In this work, three-steps annealing process to synthesize different nickel silicides corresponding to the various formation temperatures were investigated systematically. At 250 °C, the product of the first-step annealing was inverted-triangle Ni2Si, embedded in the Si substrate. Then, well-distributed NiSi thin film was synthesized, having the lowest resistivity among Ni-Si system at 400 °C. Finally, NiSi2, a Si-rich product, would form during the third-step annealing at 600 °C. NiSi2 product and Si substrate have small lattice mismatch; thus, the epitaxial relationship would be observed. We provide the evidence of diffusion behaviors and structural identification of Ni-Si system. Furthermore, these results are beneficial for the formation of specific nickel silicides, which is expected to optimize the fabrication of microelectronics.

Comparison between the solid state reaction of ultrathin Ni and Ni/Ti with Si nanowire on silicon-on-insulator

Solid-Phase Reaction of Ni with Amorphous SiGe Thin Film on SiO2

Study of Ni/Si(1 0 0) solid-state reaction with Y addition

I – V – T Studies on Ni-silicide/n-Si(100) Contacts Formed by Ti–Ni–Si Solid State Reaction

Study of Ni/Si(100) solid-state reaction with Y addition

Solid Phase Reaction of Ni/Pd/Si(100) and Enhancement of NiSi Thermal Stability Study

Enhanced Effects of Pt Layer on Thermal Stability of NiSi Thin Film by Solid Phase Reaction of Ni/Si(100) System

In-Situ Observation of the Formation of NiSi/Ni<sub>2</sub>Si Heterojunction in SiGe Nanowire with Al<sub>2</sub>O<sub>3</sub> Diffusion Barrier Layer

Atomic-scale silicidation of low resistivity Ni-Si system through in-situ TEM investigation

Phase-controlled Synthesis of Nickel Silicide Nanostructures

Preparation of Nisi2 Nanowires with Low Resistivity by Reaction Between Ni Coating and Silicon Nanowires

Study of Nickel Silicide Formation on Si(110) Substrate

Investigation of Ni Reaction with Sputtered Amorphous Sige Thin Film on Sio2 Substrate

Thermal stability, phase and interface uniformity of Ni-silicide formed by Ni–Si solid-state reaction

Ni/Si Solid Phase Reaction Studied by Temperature-Dependent Current-Voltage Technique

Study of nickel silicide formation on Si(1 1 0) substrate

Influence of Ti Interlayer on Untrathin Ni Film Silicidation

Au5si2/Si Heterojunction Nanowires Formed by Combining Sio Evaporation with Vapour-Liquid-Solid Mechanism

Ni Silicide and Ni Germanosilicide Self-Aligned Process for 65nm and Beyond CMOS Technology by 2-Step Rapid Thermal Annealing

Study of Ni/Si(100) solid-state reaction with Al addition

In-situ nanoscale characterization of composition and structure during formation of ultrathin nickel silicide